Conductivity Type Conversion

Background donor concentration in HgCdTe

“…Among other donors listed in the litera− ture are (F, Cl, Br) Te , also O, Ge, Sn and Si. One of the most extensive reviews on background impurities in MCT grown with various methods including bulk crystal growth, liq− uid−phase epitaxy (LPE), metal−organic chemical vapor de− position (MOCVD), and molecular−beam epitaxy (MBE) was given by Capper et al back in 1996 [6]; the subject was re−visited in 2011 [7]. In Ref.…”