Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures

Wang, Yuanquan; Wang, Z. L.; Brown, Tony; Brown, April S.; May, G.S.

doi:10.1063/1.126931

Cited by 15 publications

(10 citation statements)

References 22 publications

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“…However, we did observe a special dislocation configuration -dislocation dipoles, along the GaInP-on-GaAs interface. 29 Dislocations are also observed inside the GaInP epilayers, as shown in Fig. 4.…”

Section: Discussionmentioning

confidence: 78%

Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Wang

Brown

et al. 2000

Journal of Elec Materi

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Section: Discussionmentioning

confidence: 78%

Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Wang

Brown

et al. 2000

Journal of Elec Materi

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“…Another interesting result is that dislocation dipoles are also observed in some plastically relaxed dots, as shown in Figs. 4c and [27], who suggested that the dipole dislocations were formed due to the compositional modulation in the GaInP phase. In the dot case, the dislocation dipoles seem to have formed by a different mechanism.…”

Section: Resultsmentioning

confidence: 99%

Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots

Wang

Shen

et al. 2003

Journal of Crystal Growth

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In this paper, we report microstructural characterization of InAs/GaAs quantum dots grown by molecular beam epitaxy. The InAs islands were annealed in a range of temperatures under Pa flux. Prior to annealing, it is shown that the InAs islands are mainly lens-shaped, mostly vertically self-aligned and coherent to GaAs (1 0 0) substrate. Relaxation by misfit dislocations is occasionally found. Abnormal relaxation is observed in larger islands. Stacking faults in a V-shape are frequently formed in the lateral sides of these regions. No obvious change in island density and self-alignment occurred when the dots are annealed under Pa flux at 300 C. In contrast, remarkable changes took place upon annealing at 350 C. The vertically self-aligned islands disappear, and smooth interfaces were obtained. This morphological transition is argued to result from the replacement of arsenic by phosphorus in the InAs dots. The damage to the crystalinity of the abnormally relaxed regions cannot be removed by the post-growth annealing. The remarkable morphological transition by post-growth annealing under dissimilar anion atmosphere offers another possibility for tuning the dot morphology and hence their electronic properties. r

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“…On the other hand, dislocations may play a role in the evolution of composition fluctuation (Cottrell, 1953;Léonard and Desai, 1998). Wang et al (2000Wang et al ( , 2001 reported that CM occurring in Ga 0.5 In 0.5 P/GaAs lattice-matched system generates misfit dislocation dipoles. When the stress due to CM reaches a certain critical value, dislocations tend to be introduced in order to relax the misfit strain.…”

Section: Introductionmentioning

confidence: 97%

“…They concluded that the dislocations are produced by lateral CM in the Ga 0.5 In 0.5 P epitaxial layer, but not by the conventional lattice mismatch. It is believed that the critical thickness for the formation of dislocations is reduced due to the CM (Wang et al, 2000(Wang et al, , 2001, which was first calculated by OvidÕko and Sheinerman (2002a,b). They assumed that the film and substrate materials are isotropic and CM occurs in a sinusoidal form and shows no variation through the entire film thickness (not in surface soft mode).…”

Section: Introductionmentioning

confidence: 99%

Energetics of misfit dislocation dipoles in anisotropic epitaxial films with nanoscale compositional modulation

Choi

Earmme

2006

International Journal of Solids and Structures

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The elastic strain and stress fields associated with nanoscale compositional modulation in an anisotropic epitaxial film on an anisotropic substrate are obtained by using Stroh formalism and the Eshelby-type inclusion method. The composition of the epitaxial film is considered to periodically fluctuate in a surface soft mode, with the amplitude of the composition modulation maximal near the growing surface and decreasing exponentially into the film. It has been experimentally observed that the composition modulation affects the formation of a new type of crystal defects, i.e., misfit dislocation dipoles, in III-V compound semiconductor materials. The formation energy of a misfit dislocation dipole under the elastic fields due to the composition modulation is calculated in this study. It is composed of the core and self energies of two dislocations, the interaction energy between two dislocations, and the interaction energies between the composition modulation and two dislocations. Numerical calculations are performed for a dislocation dipole in a lattice-matched Ga 0.5 In 0.5 P film on a GaAs substrate.

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Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures

Cited by 15 publications

References 22 publications

Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots

Energetics of misfit dislocation dipoles in anisotropic epitaxial films with nanoscale compositional modulation

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