2005
DOI: 10.1016/j.ssc.2005.02.027
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Confinement of polar optical phonons in AlN/GaN superlattices

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Cited by 13 publications
(10 citation statements)
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“…In fact, on the basis of the dielectric continuum approximation and Loudon's uniaxial crystal model [11], several authors have made great contributions in studying the polar optical phonons and their electron-phonon interactions in wurtzite nitride SL systems [12][13][14][15][16][17][18][19][20][21]. On the side of theoretical researches, Gleize and his coworkers [12] investigated anisotropy effects on polar phonon modes in wurtzite GaN/AlN SLs, and the quasi-confined (QC) phonon modes and interface-optical (IO) phonon modes were found in the SL structures.…”
Section: Introductionmentioning
confidence: 99%
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“…In fact, on the basis of the dielectric continuum approximation and Loudon's uniaxial crystal model [11], several authors have made great contributions in studying the polar optical phonons and their electron-phonon interactions in wurtzite nitride SL systems [12][13][14][15][16][17][18][19][20][21]. On the side of theoretical researches, Gleize and his coworkers [12] investigated anisotropy effects on polar phonon modes in wurtzite GaN/AlN SLs, and the quasi-confined (QC) phonon modes and interface-optical (IO) phonon modes were found in the SL structures.…”
Section: Introductionmentioning
confidence: 99%
“…On the side of theoretical researches, Gleize and his coworkers [12] investigated anisotropy effects on polar phonon modes in wurtzite GaN/AlN SLs, and the quasi-confined (QC) phonon modes and interface-optical (IO) phonon modes were found in the SL structures. Medeiros, Anselmo and their cooperators studied the confinement of polar optical phonons in two-layer periodic GaN/AlN SLs [13] and three-layer periodic nitride SL structures [14] based on the dielectric continuum model (DCM), and the phonon dispersive spectra of the systems were displayed in their discussions. On the side of the experimental investigations, Darakchieva et al [15] studied phonons in AlN/GaN SLs using a combination of infrared spectroscopic ellipsometry and Raman scattering spectroscopy.…”
Section: Introductionmentioning
confidence: 99%
“…AlAs-GaAs SLs [1]. There are also studies on the III-nitride material system, mostly on AlN/GaN [2][3][4], while the problem completely lacks investigation in structures comprising InN.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, experimental data obtained from Raman scattering experiments were found to be in good agreement with the calculations based on the DC model, confirming the correctness of its use for the description of the lattice dynamics properties of wurtzite QW's and superlattices. Therefore, a more thorough description of the phonon modes is unnecessary [11,12].…”
Section: Introductionmentioning
confidence: 99%