Confinement Stark effect and electroabsorption in semiconductor cylindrical layer

Harutyunyan, V.A.; Aramyan, K. S.; Petrosyan, H. S.

doi:10.1016/j.physe.2003.10.006

Cited by 15 publications

(10 citation statements)

References 8 publications

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“…In the previous works of first author with co-authors the influence of external strong homogeneous electrostatic field and the influence of the weak (perturbating ) radial electrostatic fields on the electronic and optical properties of SNTs are examined theoretically [14][15][16][17][18]. In this paper we investigate theoretically the influence of the strong radial electrostatic field on the energy spectrum of charge carriers and on the optical absorption spectrum in wideband SNTs.…”

Section: Introductionmentioning

confidence: 94%

Effect of radial electrostatic field on optical absorption in semiconductor nanotube

Harutyunyan

Gasparyan

2012

J. Phys.: Conf. Ser.

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Abstract. In the effective-mass approximation the single-electron states in a wide-band semiconductor nanocylindrical heterolayer in the presence of strong lateral-radial electrical field are considered. The explicit forms of the energy spectrum and envelope wave functions of single-particle states for charge carriers are obtained using variation approach. Corresponding absorption characteristics of interband and inter-subband optical transitions in the layer in the presence of strong radial field are calculated. The radial field leads to the explicit dependence of absorption intensity on the values of effective masses of charge carriers. It is shown that absorption's threshold frequencies depend explicitly on geometrical sizes of sample and intensity of external field.

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Section: Introductionmentioning

confidence: 94%

Effect of radial electrostatic field on optical absorption in semiconductor nanotube

Harutyunyan

Gasparyan

2012

J. Phys.: Conf. Ser.

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“…we obtain for the wave function U(r) and energy E rad of radial motion of particle in the layer (Harutyunyan 2002(Harutyunyan , 2003(Harutyunyan , 2007Harutyunyan et al 2004a;:…”

Section: Modeling Approach and Approximationsmentioning

confidence: 99%

“…In the previous works of the author with co-authors the influence of weak external uniform (Harutyunyan 2003(Harutyunyan , 2007Harutyunyan et al 2004a) and radial (Harutyunyan 2002;Harutyunyan et al 2004b) electrostatic fields on the electronic and optical properties of QDQWs are examined theoretically. In the present paper, we studied theoretically the influence of strong external homogeneous electrostatic field on the single-electron states in spherical QDQW and, correspondingly, on the interband optical absorption spectra of the system.…”

Section: Introductionmentioning

confidence: 99%

Nanospherical heterolayer in strong electrostatic field

Harutyunyan

2012

Appl Nanosci

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The influence of a strong homogeneous electric field on the states of charge carriers in the structure of quantum dot-quantum well (QDQW) is studied theoretically. It is shown that a strong external field changes radically the character of carrier motion in the structure and leads to an additional field-localization of the particle along the polar angle variable. An explicit form of the wave functions and energy spectrum of single-particle states in the structure in the presence of an external field is obtained. The possibilities of experimental and operational applications of the theoretical results obtained for the study of core/layer/shell structures as well as of hollow spheres are also shown.

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“…In semiconductor microcrystals, the presence of a constant electric field gives rise to quantum-confinement Stark effects (QCSE) [19][20][21]. It manifests itself by a characteristic red-shift of the exciton photoluminescence [22][23][24][25][26], and leads to a corresponding enhancement of its lifetime [27]. If an electric field is applied perpendicularly to the plane of multi-layers quantum wells, exciton energy shift peaks were measured and successfully compared to theoretical results [28], obtained by a perturbative method introduced in [29], when the electron-hole Coulomb interaction is negligible.…”

Section: Introductionmentioning

confidence: 99%

Quantum properties of spherical semiconductor quantum dots

Billaud,

Truong

2011

Preprint

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Quantum effects at the nanometric level have been observed in many confined structures, and particularly in semiconductor quantum dots (QDs). In this work, we propose a theoretical improvement of the so-called effective mass approximation with the introduction of an effective pseudo-potential. This advantageously allows analytic calculations to a large extent, and leads to a better agreement with experimental data. We have obtained, as a function of the QD radius, in precise domains of validity, the QD ground state energy, its Stark and Lamb shifts. An observable Lamb shift is notably predicted for judiciously chosen semiconductor and radius. Despite the intrinsic non-degeneracy of the QD energy spectrum, we propose a Gedankenexperiment based on the use of the Casimir effect to test its observability. Finally, the effect of an electromagnetic cavity on semiconductor QDs is also considered, and its Purcell factor evaluated. This last result raises the possibility of having a QD-LASER emitting in the range of visible light.

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Confinement Stark effect and electroabsorption in semiconductor cylindrical layer

Cited by 15 publications

References 8 publications

Effect of radial electrostatic field on optical absorption in semiconductor nanotube

Effect of radial electrostatic field on optical absorption in semiconductor nanotube

Nanospherical heterolayer in strong electrostatic field

Quantum properties of spherical semiconductor quantum dots

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