Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer

Jana, Dipankar; Chatterjee, Amitabh; Sharma, T. K.

doi:10.1016/j.jlumin.2019.116904

Cited by 6 publications

(6 citation statements)

References 33 publications

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“…Since the device reliability and the GaN epitaxy are strongly correlated, high crystalline qualities and smooth surface morphology of the GaN epi-layers are extremely necessary. A remarkable enhancement in surface morphology of the GaN epi-structure along with better 2DEG properties and crystalline quality can be achieved by varying the V/III molar ratio [57,58] . At a higher ratio, both point defects and carbon incorporation considerably decrease the GaN epi-layer, leading to a better device reliability.…”

Section: Gan Materials Quality Optimizationmentioning

confidence: 99%

“…Wosko et al [58] demonstrated the availability of in situ grown non-continous SiN x layers in the improvements of stress reduction and material epitaxy of GaN layers deposited on silicon substrates. The as-grown specimen with the SiN x nano-layer shows excellent structural properties, with GaN (0002) diffraction peak's full width at half maximum of 362 arcsec and calculated basal plane stress lower than 200 MPa.…”

Section: Gan Materials Quality Optimizationmentioning

confidence: 99%

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Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

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Section: Gan Materials Quality Optimizationmentioning

confidence: 99%

Section: Gan Materials Quality Optimizationmentioning

confidence: 99%

Recent progress of physical failure analysis of GaN HEMTs

Xi¹,

Du²,

Sun³

et al. 2021

J. Semicond.

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“…Đối với cấu trúc dị thể, giá trị mật độ hạt dẫn trong lớp 2DEG điển hình là 1 x 10 13 cm -2 với nồng độ Al là ~ 20 -30 %. Các tính chất nổi trội của linh kiện trên cơ sở vật liệu AlGaN/GaN so với các linh kiện truyền thống sử dụng Silic và GaAs là: Tần số làm việc rất cao (lên tới hàng chục, thậm chí hàng trăm GHz), nhiệt độ làm việc cao (nên chỉ cần làm mát ở mức độ thấp nhất), điện trường đánh thủng cao (2 x 10 6 V/cm) và vận tốc chuyển động của điện tử lên tới 10 7 cm/s [2,[4][5][6].…”

Section: 16unclassified

“…Mối liên hệ giữa độ sâu ăn mòn và điện trở tiếp xúc đặc trưng.Điều này cho thấy rằng, quá trình ủ cho dù là ở nhiệt độ cao 900 o C[4] vẫn là không đủ cho sự khuếch tán của nguyên tử kim loại đến lớp khí điện tử 2 chiều 2DEG tại bề mặt phân cách của AlGaN/GaN trong cấu trúc HEMT. Lớp AlGaN không phản ứng đã cản trở hiệu ứng xuyên hầm cần thiết cho các hạt tải di chuyển qua mặt phân cách kim loại -bán dẫn.…”

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Studing the Effect of Etching Process on the Ohmic Specific Contact Resistance of AlGaN/GaN HEMT

2021

JST: ETSD

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In electronic devices, ranging from integrated circuits to solar cells, the Ohmic specific contact resistance between metal and semiconductor is a measure of device performance. In this paper, the effect of Induction Coupled Plasma etching (ICP) on creating specific contact resistance between metals and semiconductors was investigated by linear transmission method (LTLM). The obtained results show that selecting etching depth and etch process conditions by ICP method before metal coating is a decisive step in the manufacture of low resistance Ohmic contact. The value of formed Ohmic specific contact resistance is the lowest when the etching depth ensures the metal layers to cover the doped AlGaN region at a distance of about 8nm above the AlGaN/GaN interface. With an ion power source (RIE) of 30W and a plasma power source (ICP) of 250W, the etching rate of AlGaN material is approximately 27.21 nm / minute. The Ohmic specific contact resistance of metal layers Ti (20nm) / Al (200nm) / Pd (60nm) / Au (100nm) with AlGaN semiconductor has an optimal value of ρc = 1.08 x 10-7 cm2, despite the sample was annealing at a relatively low temperature of 650oC, in a nitrogen atmosphere at 650oC.

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“…Various techniques have been developed to circumvent this problem. The proposed approaches mainly include Fe-doping [10,11] , Mg-doping [12] , Be-doping [13] , C-doping [14,15] , p-AlGaN back barrier [16] , H 2 in-situ etching in an NH 3 atmosphere [11] , and so on. Based on these techniques, HEMTs on freestanding GaN substrates have been reported [14, 17−23] .…”

Section: Introductionmentioning

confidence: 99%

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Hu,

Wang,

Wang

et al. 2024

J. Semicond.

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In this letter, high power density AlGaN/GaN high electron-mobility transistors (HEMTs) on a freestanding GaN substrate are reported. An asymmetric Γ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance. The breakdown voltage (BV) is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92 μm. A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V. The maximum oscillation frequency (f max) and unity current gain cut-off frequency (f t) of the AlGaN/GaN HEMTs exceed 30 and 20 GHz, respectively. The results demonstrate the potential of AlGaN/GaN HEMTs on free-standing GaN substrates for microwave power applications.

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Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer

Cited by 6 publications

References 33 publications

Recent progress of physical failure analysis of GaN HEMTs

Recent progress of physical failure analysis of GaN HEMTs

Studing the Effect of Etching Process on the Ohmic Specific Contact Resistance of AlGaN/GaN HEMT

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

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