“…Existing NIR PDs, exemplified by the InGaAs detector, have been applied in infrared civilian markets and military fields due to their adjustable band gap. However, the limited operating wavelength range (800 nm to 1.7 μm) and process shortcomings (difficult to prepare large size) have seriously hindered its performance and application expansion. , 3D-graphene, as a derivative of 2D-graphene, not only maintains the extraordinary properties of graphene, such as high electrical conductivity and wide-band photoresponse, but more importantly, its unique interlayer interconnecting structure greatly improves light absorption. − In addition, PbS QDs are also promising candidates for NIR photovoltaic applications owing to their straightforward solution processing, size-tunable bandgap, and excellent photovoltaic properties. , …”