Conformal deposition of WS₂ layered film by low-temperature metal-organic chemical vapor deposition

Abstract

WS2 metal-organic (MO) chemical vapor deposition was demonstrated on Si and Al2O3 substrates. Novel MO W precursor of n-BuNC-W(CO)5 and (t-C4H9)2S2. as S precursor were synthesized for the purpose. The obtained films were layered 1T structure as a typical transition metal di-chalcogenide with almost the stoichiometric compositions. The film was significantly stable for 60 days shelf time in the air atmosphere. The layered structure can cover conformally on the 3-simensional fin structure with the layers parallel to the fin surface everywhere.