1992
DOI: 10.1063/1.107791
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Conformal deposition of WSix films on micron-sized trenches: The reactivity of film precursors

Abstract: Tungsten silicide films (WSix) were deposited from WF6 and SiH4 by low pressure chemical vapor deposition (LPCVD) using a tubular reactor system. At the deposition temperature of 150 °C, films having low concentrations of residual fluorine (∼1.5×1021 cm−3) deposited quite conformally on micron-sized trenches. The sticking probability of the film precursor was determined from the step coverage quality, as a function of deposition temperature ranging from 120 to 390 °C. While the sticking probability remained co… Show more

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Cited by 11 publications
(2 citation statements)
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“…These criteria can also be satisfied by promoting the reactions of undecomposed precursors on the surface of trenches at low temperature and low pressure conditions, under which the sticking probability of the precursor is low. 20,21 For the conformal filling of high aspect ratio structures, an adequate and uniform supply of precursors over the surfaces can be achieved by increasing the precursor diffusion velocity and by supplying a large amount of precursor to the surface. To verify the discussed conformal coating mechanism by LPCVD, in Secs.…”
Section: A Mechanism Of Conformal Depositionmentioning
confidence: 99%
“…These criteria can also be satisfied by promoting the reactions of undecomposed precursors on the surface of trenches at low temperature and low pressure conditions, under which the sticking probability of the precursor is low. 20,21 For the conformal filling of high aspect ratio structures, an adequate and uniform supply of precursors over the surfaces can be achieved by increasing the precursor diffusion velocity and by supplying a large amount of precursor to the surface. To verify the discussed conformal coating mechanism by LPCVD, in Secs.…”
Section: A Mechanism Of Conformal Depositionmentioning
confidence: 99%
“…Low-pressure chemical vapor deposition (LPCVD) is an attractive process to produce conformal thin films because it has the ability to coat substrate topographies (high-aspect-ratio trenches) uniformly and conformally [12,18,19] unachievable by most line-of-sight deposition techniques [20,21] such as e-beam and thermal evaporation. Growth kinetics data for the pyrolysis of 10 B enriched CVD precursors in different reaction temperature zones is crucial to determine the deposition parameters to conformally coat high-aspect-ratio pillar substrates with 10 B films.…”
Section: Boron Depositionmentioning
confidence: 99%