Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B<inf>2</inf>H<inf>6</inf>/Helium Self-Regulatory Plasma Doping process

Abstract

A new Self-Regulatory Plasma Doping (SRPD) technique with B 2 H 6 /Helium gas plasma has been successfully developed that provide conformal doping for fins and precise controllable ultra-shallow doping for planar FET. Manufacturing level of process controllability (<1% on dose) of the new SRPD has been realized, and advantage of the SRPD has been verified with FinFETs with metal/high-k gate stack and planar pMOSFETs for the first time. Short channel effect (SCE) improvement for FinFETs is clearly obtained. Dramatically I on enhancement (+14% I on at the I off of 10 -8 A/um vs. ion implant ref.) with SCE suppression for planar pMOSFETs is also realized. This new SRPD will be the excellent compatible doping method for pMOS FinFETs as well as planar pMOSFETs extension for 32nm node and beyond.

Junction Technology for 2D and 3D Devices: Self Regulation Plasma Doping SRPD

“…It is sure that this SRPD is the best candidate for both FinFETs and planar MOSFETs. I/I +spike RTA [10] Ge PAI +BF2 I/I +spike RTA [9] SRPD +spike RTA 16: I on -I off characteristics of 38-860nm gate length planar pMOSFETs. I on with the SRPD is improved by 14% compared to that with the II at I off of 10 -8 A/um and ~26% at I off of 10 -9 A/um.…”

Challenges of 2-D (3-D) device doping process and doping profiling metrology

“…Therefore, PLAD shows a perfect ion beam parallelism in collisionless plasma, and with conformal doping capability due to ion scattering and fast neutral implant in collisional plasma. So far, PLAD has demonstrated capabilities and promising results on 3-D devices manufacturing [7][8][9][10][11]. It is necessary to understand vertical and lateral profile effects on CMOS device performance because mainly the lateral profile characteristics (Leff, gate overlap, lateral abruptness…) dominate the transistor operation and its characteristics.…”

Challenges of 22 nm and beyond CMOS technology

“…How to minimize the contribution from the USJ module to the variability in device characteristics for scaled devices is another challenge. A novel B 2 H 6 /Helium self-regulatory plasma doping (SRPD) process is proposed with desirable conformal doping layer for planar devices and FINFETs [98] . It is verified that this new SRPD shows great potentials in both FINFETs and planar FETs for 22 nm node.…”