Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)

Fuse, Kazuhiko; Tanimura, Hideaki; Aoyama, Takayuki; Kato, S.; Kobayashi, Ippei

doi:10.23919/iwjt.2017.7966517

Cited by 7 publications

(3 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 (a)]. 20) The FLA tool which has sub-ms resolution and ramp up rate can be easily adjusted to meet various demands, for example, dopant activation, [21][22][23][24][25][26][27] contact formation, 28) postdeposition anneals for high-k dielectrics, [29][30][31] and so on.…”

Section: Flash Lamp Annealing (Fla) Equipmentmentioning

confidence: 99%

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing

Tanimura

Ota²,

Kawarazaki³

et al. 2023

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We used millisecond flash lamp annealing (FLA) to form thin ferroelectric Hf0.5Zr0.5O2 (HZO) films with thicknesses of less than 10 nm and with remanent polarization up to 30 µC/cm2. A clear dependency of the polarization on the annealing temperature and time was observed, indicating that the precise management of the thermal budget is a key factor in forming ferroelectric HZO. We also show and compare the process windows within which ferroelectricity in 10 nm and 5 nm samples is obtained. The results show that a high thermal budget is necessary for thinner samples. We examined the endurance characteristics and a greater endurance compared to RTA treatment was observed with more than 1010 cycles without breakdown confirmed in 5 nm thick samples. The data indicates that there is the possibility of further thickness scaling whilst retaining highly durable characteristics for films annealed by FLA.

show abstract

Section: Flash Lamp Annealing (Fla) Equipmentmentioning

confidence: 99%

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing

Tanimura

Ota²,

Kawarazaki³

et al. 2023

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Its duration is on range of milliseconds and wavelength is on range of 200-1000 nm including the visible light [1]. For this reason, the IPL process is also called the flash lamp process [2][3][4][5][6][7][8]. The IPL system consists of a xenon flash lamp, a reflector, a capacitor, and pulse controller as shown in figure 1(a) [9].…”

Section: Introductionmentioning

confidence: 99%

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Noh¹,

Kim²,

Lee³

et al. 2022

Nanotechnology

View full text Add to dashboard Cite

The intense pulsed light (IPL) post-treatment process has attracted great attention in the device fabrication due to its versatility and rapidity particularly for solution process functional structures in devices, flexible/printed electronics, and continuous manufacturing process. The metal oxide materials inherently have multi-functionality and have been widely used in form of thin films or nanostructures in device application such as thin-film transistors, light-emitting diodes, solar cells, supercapacitors, etc. The IPL treatment enhances the physical and/or chemical properties of the functional metal oxide through photothermal effects. However, most metal oxides are transparent to most range of visible light and require more energy for post-treatment. In this review, we have summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications. The sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector. The IPL process becomes an innovative versatile post-treatment process in conjunction with multi-functional metal oxides in near-future device applications.

show abstract

“…Device structures in 3D seem to allow further scaling down and boosted performances, but it also forced the fabrication processes to be adapted. 3D channel and contact in a non-planar device, for example FinFET and gate-all-around (GAA) devices, require conformal and shallow doping profiles [7]. Especially, the contact requires ultra-shallow junction (USJ) to overcome short channel effect (SCE) and high dose for low resistances.…”

Section: Introductionmentioning

confidence: 99%

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

et al. 2020

View full text Add to dashboard Cite

Recently, a shallow and conformal doping profile is required for promising 3D structured devices. In this study, we deposited the dopant phosphorus (P) using modified plasma assisted doping (PaD) followed by an annealing process to electrically activate the dopants. A rapid thermal annealing process (RTP) was the first approach tested for activation but it resulted in a deep junction (> 35 nm). To reduce the junction depth, we tried the flash lamp annealing process (FLP) to shorten the annealing time. We also predicted the annealing temperature by numerical thermal analysis, which reached 1,020 ℃. However, the FLP resulted in a deep junction (~ 30 nm), which was not shallow enough to suppress SCEs. Since an even shorter annealing process was required to form a USJ, we tried the laser annealing process (LAP) as a promising alternative. The LAP, which had a power density of 0.3 J/cm 2 , increased the surface temperature up to 1,100 ℃ with a shallow isothermal layer. Using the LAP, we achieved a USJ with an activated surface dopant concentration of 3.86×10 19 cm-3 and a junction depth of 10 nm, which will allow further scaling-down of devices.

show abstract

Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)

Cited by 7 publications

References 2 publications

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Contact Info

Product

Resources

About

Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)

Cited by 7 publications

References 2 publications

Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing

Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Contact Info

Product

Resources

About

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing

Fabrication of thin ferroelectric Hf_0.5Zr_0.5O₂ films by millisecond flash lamp annealing