Conformation-Induced Electrostatic Gating of the Conduction of Spiropyran-Coated Organic Thin-Film Transistors

Shen, Qian; Cao, Yang; Liu, Song; Steigerwald, Michael L.; Guo, Xuefeng

doi:10.1021/jp9026817

Cited by 67 publications

(66 citation statements)

References 42 publications

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“…[1][2][3][4]14 ] Organic fi eld-effect transistors modifi ed with photochromic molecules were extensively investigated in order to construct memory elements with enhanced optical switching characteristics. The reported OFET structures comprised some photochromic material as a dopant in a semiconductor layer, [15][16][17][18][19][20] as a buffer layer between semiconductor and source/ drain electrodes, [ 21,22 ] and as an interfacial layer between wileyonlinelibrary.com Various functionalized bis(heteroaryl)ethenes represent a promising group of photochromic materials for designing organic memory elements (see examples in entries 10-17, Table S1, Supporting Information). [ 26,[30][31][32][33] Recently, some of us have developed a new family of photochromic diarylethenes comprising cyclopentenone "bridge," electron rich thiophene and electron defi cient oxazole pendant units as hetaryl residues.…”

Section: Doi: 101002/aelm201500219mentioning

confidence: 99%

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Frolova

Rezvanova

Ширинян

et al. 2015

Adv Elect Materials

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semiconductor and dielectric. [23][24][25][26][27] The latter approach seems to be the most promising. It is known that the highest density of charge carriers in operating OFET fl ows in a few molecular layers of semiconductor adjacent to dielectric. [ 28 ] Therefore, photoisomerization of a photochromic compound at the dielectric/semiconductor interface changes signifi cantly electrical characteristics of the conducting channel (density of traps/carriers, electrical permittivity, capacitance) and the device itself thus providing the required photoswitching effect.While comparing the characteristics of the OFET-based memory elements, few important parameters should be considered. First of all, it is a switching coeffi cient defi ned as k sw = I DS (1)/ I DS (2), where I DS (1) and I DS (2) correspond to the drain currents of the OFET in states 1 and 2, respectively, measured at the same gate voltage V GS = const, which shows how strong is the hysteresis in the electrical characteristics of the transistor or how wide is the memory window. The device operating voltages, a programming speed, and a long-term stability of the distinct electrical states (retention characteristics) are also crucially important.Analyzing previous reports on the OFET-based optical memories comprising photochromic materials, one can notice their low switching coeffi cients which stay typically below 10 and hardly exceed 100 for the best examples (Table S1, Supporting Information). These devices typically operate at high voltages (30-100 V), while their programming is very slow and requires light illumination within tens of seconds or even minutes. To make this type of memory elements more interesting for practical applications one has to improve signifi cantly their characteristics. We have reported very recently memory elements based on a photochromic spirooxazine which showed decent operating voltages (<5 V) and reasonably high switching coefficients of ≈10 3 . [ 29 ] Unfortunately, the programming speeds were still rather low mainly due to fundamental limitations of the used materials and the device architecture.Here we present a concept of the memory elements operating via optically and electrically triggered charge separation between the organic semiconductor ([60]fullerene) and the photochromic dielectric (specially designed 1,2-bis(hetaryl) ethene) layers. The proposed approach allowed us to decrease the device programming time by three orders of magnitude down to few milliseconds with a high potential to reach practically interesting microsecond operation regime. Additionally, the designed devices showed exceptionally wide memory windows refl ected by the switching coeffi cients of ≈10 5 at reasonably low operation voltages (3-10 V).

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Section: Doi: 101002/aelm201500219mentioning

confidence: 99%

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Frolova

Rezvanova

Ширинян

et al. 2015

Adv Elect Materials

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“…They reported I on / I off = 5.0. Shen et al proposed a spiropyran layer on the surface of the pentacene channel [112]. However, the effect on spiropyran photochromism was very small ( I on / I off = 1.6), because most of the drain current runs just near the channel–dielectric interface.…”

Section: Light-receiving Ofetsmentioning

confidence: 99%

Recent progress in photoactive organic field-effect transistors

Wakayama

Hayakawa

Seo

2014

Science and Technology of Advanced Materials

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Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

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“…[6][7][8] The photo-responsivity of spiropyran enables new routes to realizing a variety of optoelectronic devices based on organic field-effect transistors (OFETs). [11][12][13][14][15] Significant efforts have been applied toward utilizing spiropyran as a light-responsive element in photoswitchable OFETs; [16][17][18][19][20] however, employing spirotype polymer compounds in organic flash memory devices is not yet reported. [11][12][13][14][15] Significant efforts have been applied toward utilizing spiropyran as a light-responsive element in photoswitchable OFETs; [16][17][18][19][20] however, employing spirotype polymer compounds in organic flash memory devices is not yet reported.…”

Section: Introductionmentioning

confidence: 99%

Light-responsive spiropyran based polymer thin films for use in organic field-effect transistor memories

et al. 2016

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Light-responsive spirotype compounds have been receiving attention as attractive smart materials because of their various potential applications in organic optoelectronic devices, based on organic field-effect transistors (OFETs). However, it still remains a challenge to apply the organic flash memory devices using spirotype compounds due to the relatively poor development of new photosensitive electret materials.Here, we report the synthesis of a novel photosensitive polymer electret material, spiropyran, containing poly(3,5-benzoic acid hexafluoroisopropylidene diphthalimide) (6FDA-DBA-SP), and the development of light-responsive flexible memory devices using the 6FDA-DBA-SP electret layer. The charge trapping properties of 6FDA-DBA-SP under light illumination were enhanced by the electron withdrawing properties and lowering energetic barrier of charge trapping between 6FDA-DBA-SP and pentacene analysed by measuring the electronic structures at the pentacene/6FDA-DBA-SP interfaces. The resulting OFETs showed enlarged hysteresis under white-light illumination and exhibited bi-stable current states after the light-assisted programing and erasing processes, and they were utilized in non-volatile flexible memory device applications. † Electronic supplementary information (ESI) available: Synthetic methods and analysis of 6FDA-DBA-SP; the 1 H-NMR spectrum, DSC curves, and TGA curves of 6FDA-DBA and 6FDA-DBA-SP; UV-Vis absorption spectra of SP-OH, 6FDA-DBA, and 6FDA-DBA-SP; electrical characteristics table of the SP-OFETs; transfer characteristics in the saturation regime of the SP-OFETs; transfer characteristics of the SP-OFETs during successive sweeps under different conditions (10 sweeps under dark conditions and 1 sweep under white-light); transfer characteristics of SP-OFETs as a function of applied bias time or voltage under dark conditions; transfer characteristics of SP-OFETs as a function of applied bias time under white-light illumination (sweeping from À40 V to 40 V); transfer characteristics of pentacene OFETs based on a polystyrene layer; comparative UPS spectra of pentacene and 6FDA-DBA-SP films in the dark or under white-light; (ahn) 2 versus hn plot of 6FDA-DBA-SP and pentacene films; current response to one-cycle switching behavior of SP-OFET memory devices; and transfer characteristics of the flexible SP-OFETs before and after bending in the dark. See

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Conformation-Induced Electrostatic Gating of the Conduction of Spiropyran-Coated Organic Thin-Film Transistors

Cited by 67 publications

References 42 publications

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Recent progress in photoactive organic field-effect transistors

Light-responsive spiropyran based polymer thin films for use in organic field-effect transistor memories

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