“Conformation Locked” Strong Electron-Deficient Poly(p-Phenylene Vinylene) Derivatives for Ambient-Stable n-Type Field-Effect Transistors: Synthesis, Properties, and Effects of Fluorine Substitution Position

Abstract

The charge carrier mobility of p-type and ambipolar polymer field-effect transistors (FETs) has been improved substantially. Nonetheless, high-mobility n-type polymers are rare, and few can be operated under ambient conditions. This situation is mainly caused by the scarcity of strong electron-deficient building blocks. Herein, we present two novel electron-deficient building blocks, FBDOPV-1 and FBDOPV-2, with low LUMO levels down to -4.38 eV. On the basis of both building blocks, we develop two poly(p-phenylene vinylene) derivatives (PPVs), FBDPPV-1 and FBDPPV-2, for high-performance n-type polymer FETs. The introduction of the fluorine atoms effectively lowers the LUMO levels of both polymers, leading to LUMO levels as low as -4.30 eV. Fluorination endows both polymers with not only lower LUMO levels, but also more ordered thin-film packing, smaller π-π stacking distance, stronger interchain interaction and locked conformation of polymer backbones. All these factors provide FBDPPV-1 with high electron mobilities up to 1.70 cm(2) V(-1) s(-1) and good stability under ambient conditions. Furthermore, when polymers have different fluorination positions, their backbone conformations in solid state differ, eventually leading to different device performance.

The marriage of AIE and interface engineering: convenient synthesis and enhanced photovoltaic performance

“…The first diffraction peaks (100) appear at 2 θ = 2.53 and 4.34° for TPE-1 and TPE-2, with interlayer distances of 20.07 Å and 35.31 Å, respectively. These results demonstrated that the thin film of TPE-2 takes a predominantly well-organized stacking structure along the vertical orientation, which is well-known to achieve a high carrier mobility 28 because of the intermolecular interactions parallel to the direction of the channel current flow in the PSC devices. 29 Thus, the increase of J sc of TPE-2 compared to that of TPE-1 should be ascribed to the higher electron transporting ability and lower contact resistance, mainly due to its compact and well-organized lamellar structure.…”

Imide- and Amide-Functionalized Polymer Semiconductors

“…433 By introducing fluorine atoms on IBDF, Pei et al synthesized two new polymers P352 and P353 via microwave-assisted Stille coupling. 137 In comparison to the LUMO (−4.1 eV) of P351, IBDF fluorination effectively lowers the LUMOs of P352 and P353 to ∼−4.3 eV, which are among the lowest for polymer semiconductors. It was found that fluorination not only enables the low-lying LUMO but also greatly promotes polymer packing.…”

Recent Advances in High-Mobility Polymeric Semiconductor Materials

“…2013 年, 裴坚课题组首次报道了一类新型的含有 苯并二呋喃二酮的 PPV 衍生物, 简称 BDPPV [77] . 在空 气中, 其顶栅 OFET 器件展现出优异的 n-型电荷传输性 能, 其电子迁移率高达 1.1 cm [78] . 研究表明:…”