Connection Test of Area Bump Using Active-Matrix Switches

Abstract

We propose a new method of bump connection testing using active-matrix metal oxide semiconductor field-effect transistor (MOSFET) switches. One of the bump connections is electrically selected using the active-matrix switches and the current-voltage characteristic between chips is measured through the selected bump connection. In this method, the testing of the individual bumps and the investigation of the bonding failure mechanism are possible. This method can also be applied to the actual chip because the chip can be electrically separated from a test circuit using active-matrix MOSFET switches.

A Large Number of I/O Connections using Compliant Bump

“…The test of bump connection is carried out by using not only daisy chain but also active-matrix switch array [10]. We also show that a compliant bump reduces the change in characteristic of MOSFET when bump bonding is performed directly on the MOSFET.…”

“…In order to investigate why the bonding of the conventional plated bump failed, we carried out the connection test using active-matrix switches [10]. Figure 9 shows the schematic illustration of connection test using active-matrix MOSFET switches.…”