Considerations on grounding possibilities of Transformerless grid-connected photovoltaic inverters

Kazanbas, Mehmet; Menezes, L.; Zacharias, Peter

doi:10.1109/energycon.2012.6347751

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…Thanks to the adoption of chip-scale isolators based on inductive and/or capacitive coupling [1]- [4], highly integrated low-cost silicon solutions have been developed [5]- [10]. On the other hand, wideband power devices, such as gallium nitride high-electron mobility transistors (GaN HEMTs), enable high switching frequencies for driver/power devices, thus requiring high common-mode transient immunity (CMTI) [11]. Unfortunately, commercial isolated gate drivers are hardly able to guarantee CMTI and isolation rating higher than 200 kV/s and 10 kV, respectively, due the intrinsic limitations of the adopted isolation components (i.e., isolation transformers and capacitors), while exploiting customized and expensive fabrication processes [12]- [16].…”

Section: Introductionmentioning

confidence: 99%

A GaN-Integrated Galvanically Isolated Data Link Based on RF Planar Coupling With Voltage Combining for Gate-Driver Applications

Spataro,

Ragonese,

Spina

et al. 2024

IEEE Access

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In this paper the design of a galvanically isolated data link for gate-driver applications in GaN technology is presented. The isolation channel exploits the near-field RF planar coupling between micro-antennas placed on two side-by-side co-packaged chips. Adopted package-scale isolation has several benefits i.e., the applicability to any integration technology and the capability to achieve both very high isolation rating and common-mode transient immunity by means of a proper distance between chips. The isolation channel adopts an RF carrier of 2 GHz that is modulated by a PWM signal. For the first time, a voltage-combining approach based on multiple antennas has been explored in a galvanically isolated data link. Specifically, the TX front-end consists of two capacitively coupled RF oscillators connected to two differential antennas designed for voltage combining. The RX front-end combines the transmitted RF signals by means of one differential antenna and extracts the PWM signal by means of a rectifier and an amplifier with a dynamic offset compensation. Emphasis is given to the design of micro-antennas, which is essential to minimize channel loss. The data link was tested by using a chip-on-board assembly to validate the proposed approach. The overall current consumption was lower than 4 mA for a PWM signal of 500 kHz and a duty cycle of 50%.INDEX TERMS Class D oscillator, current-reuse, dynamic offset compensation, galvanic isolation, GaN technology, gate driver, on-chip antennas, voltage-combining.

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