Constitution of the System Gallium-Indium

Denny, J.P.; Hamilton, J.H.; Lewis, John R.

doi:10.1007/bf03397646

Cited by 7 publications

(5 citation statements)

References 3 publications

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“…By using eq 8 and fundamental thermodynamic identities, the 8 The temperature accuracy is ±0.3 °C. 6 The emf accuracy is ±0.04 mV. following equations for AH^a nd ASoaxs were derived from the data of this work: AHoa = (791.4 + 437.1 ß)(1 -xoa)2 cal/(g atom) (9) ASoa™ = -(0.5687 + 0.0699xGa)(1xoa)2 cal/(g atom K) (10) By extrapolating eq 9 and 10 over the composition range 0 < xoa ^1, the following equations are derived, again with the aid of the Gibbs-Duhem equation: Aht* = (791.4 + 218.6XGa)XGa(1 -XQa) (11) ASXS = -(0.5687 + 0.0350xGa)xGa(1 -XQa) (12) The composition dependence of AS*8, 1, and AH^i s shown in Figure 8.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamic studies of gallium-indium liquid alloys by solid state electrochemistry with oxide electrolytes

Pong¹,

Donaghey²

1976

J. Chem. Eng. Data

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Section: Resultsmentioning

confidence: 99%

Thermodynamic studies of gallium-indium liquid alloys by solid state electrochemistry with oxide electrolytes

Pong¹,

Donaghey²

1976

J. Chem. Eng. Data

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“…Because the melting point of the liquid metal alloy increases when its gallium concentration decreases, [ 53 ] we expect that the electrochemical reaction eventually stops when the liquid metal solidifies as its melting point increases above room temperature. Our calculations estimate that the reaction can last up to 49 minutes for high current (1 A) applications, and up to 8 years for low current (11.5 μA) applications before the liquid metal solidifies (Experimental Section).…”

Section: Resultsmentioning

confidence: 99%

“…It transitions from 15.7 °C (below room temperature, 24 wt.% of indium) to 22.2 °C (room temperature, 28.7 wt.% of indium). [ 53 ] The mass of EGaIn in a chamber of the container was 3.69 g. The liquid metal will not solidify until 0.71 g, or 0.0102 mol, of gallium is consumed. This process will transfer 0.0306 mol of electrons, which is equivalent to a theoretic capacity of 222.3 mAh · g −1 .…”

Section: Methodsmentioning

confidence: 99%

Mechanically Rupturing Liquid Metal Oxide Induces Electrochemical Energy

Ye,

Zheng,

Werner

et al. 2023

Adv Funct Materials

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Liquid metals, such as Gallium‐based alloys, have unique mechanical and electrical properties because they behave like liquid at room temperature. These properties make liquid metals favorable for soft electronics and stretchable conductors. In addition, these metals spontaneously form a thin oxide layer on their surface. Applications made possible by this delicate oxide skin include shape reconfigurable electronics, 3D‐printed structures, and unconventional actuators. This paper introduces a new approach where liquid metal oxide serves as an electrochemical energy source. By mechanically rupturing their surface oxide, liquid metals form a galvanic cell and convert their chemical energy to electrical energy. When dispersing liquid metals into an ionically‐conductive liquid to form emulsions, this composite material can provide ∼500 mV of open‐circuit voltage and up to ∼4 μW of power. Protected by the naturally occurring oxide skin, the passivating oxide layer of the liquid metal shields it from self‐discharge over time. The device is also stable in harsh environments, such as high temperature or aquatic conditions. Future applications of this device are demonstrated by designing a strain‐activated stretchable battery and a pressure‐sensitive self‐powered keypad. These findings may unlock new pathways to design stretchable batteries and harness their inherent energy for self‐powered robust devices.

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“…[ 4,5 ] Interestingly, these polymorphs could be detected in the DSC curve of the EGaIn alloy, which is a low melting point eutectic liquid (Figure 1a and Table S1, Supporting Information). [ 23,24 ] Chen et al. [ 25 ] reported on the metastable phases in gallium–indium alloy and attributed the endothermic peaks, which are at −11 and −22 °C to a metastable solid‐solution composed of β‐Ga and δ‐Ga.…”

Section: Resultsmentioning

confidence: 99%

Liquid Crystal Structure of Supercooled Liquid Gallium and Eutectic Gallium–Indium

et al. 2021

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Understanding the origin of structural ordering in supercooled liquid gallium (Ga) has been a great scientific quest in the past decades. Here, reflective polarized optical microscopy on Ga sandwiched between glasses treated with rubbed polymers reveals the onset of an anisotropic reflection at 120 °C that increases on cooling and persists down to room temperature or below. The polymer rubbing usually aligns the director of thermotropic liquid crystals (LCs) parallel to the rubbing direction. On the other hand, when Ga is sandwiched between substrates that align conventional LC molecules normal to the surface, the reflection is isotropic, but mechanical shear force induces anisotropic reflection that relaxes in seconds. Such alignment effects and shear‐induced realignment are typical to conventional thermotropic LCs and indicate a LC structure of liquid Ga. Specifically, Ga textures obtained by atomic force and scanning electron microscopy reveal the existence of a lamellar structure corresponding to a smectic LC phase, while the nanometer‐thin lamellar structure is transparent under transmission polarized optical microscopy. Such spatial molecular arrangements may be attributed to dimer molecular entities in the supercooled liquid Ga. The LC structure observation of electrically conductive liquid Ga can provide new opportunities in materials science and LC applications.

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Constitution of the System Gallium-Indium

Cited by 7 publications

References 3 publications

Thermodynamic studies of gallium-indium liquid alloys by solid state electrochemistry with oxide electrolytes

Thermodynamic studies of gallium-indium liquid alloys by solid state electrochemistry with oxide electrolytes

Mechanically Rupturing Liquid Metal Oxide Induces Electrochemical Energy

Liquid Crystal Structure of Supercooled Liquid Gallium and Eutectic Gallium–Indium

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