Photomechanical
effect in semiconductors refers to a phenomenon
that plastic deformation is influenced by light-induced electron–hole
(e-h) excitation. To date, increasing amounts of theoretical and experimental
studies have been performed to illustrate the physical origin of this
phenomenon. In contrast, there has been little discussion about this
effect in superhard materials. Here, we adopted constrained density
functional theory simulations to assess how e-h excitation influences
two boron-based superhard materials: boron carbide (B4C)
and boron subphosphide (B12P2). We found that
the ideal shear strengths of both systems decrease under e-h excited
states. Under e-h excitation, the redistribution of electrons and
holes contributes to the decreased strength, weakening the bonds initially
broken under the shear deformation. The simulation results provide
a fundamental explanation for the softening effects of superhard materials
under e-h excitation. This study also provides a basis to tune the
mechanical properties of superhard materials via light irradiation.