2023
DOI: 10.1039/d3ee02591h
|View full text |Cite
|
Sign up to set email alerts
|

Constructing robust heterointerfaces for carrier viaduct via interfacial molecular bridges enables efficient and stable inverted perovskite solar cells

Huifen Xu,
Zheng Liang,
Jiajiu Ye
et al.

Abstract: A robust perovskite-substrate interface is critical to realize state-of-the-art inverted (p-i-n) perovskite solar cells (PSCs), as it enables charge carrier selectivity by the means of suitable electrostatics, energy level alignment,...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 33 publications
(5 citation statements)
references
References 55 publications
0
5
0
Order By: Relevance
“…[56,57] The FF loss between the Shockley-Queisser (S-Q) limit and the measured value (consisting of nonradiative loss and charge transport loss) is compared to better understand the loss mechanism of PSCs (Note S7, Supporting Information). [58,59] Figure 5f shows that SDP-PCE M effectively inhibits both nonradiative and charge transfer loss, resulting in an FF of 84.86%. Predominantly, SDP-FF M , because of effectively inhibiting nonradiative loss and reducing charge transfer loss to a greater extent, thus significantly enhancing FF up to 86.0%, corresponding to 95.6% of the thermodynamic limit of its bandgap (Table S8, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…[56,57] The FF loss between the Shockley-Queisser (S-Q) limit and the measured value (consisting of nonradiative loss and charge transport loss) is compared to better understand the loss mechanism of PSCs (Note S7, Supporting Information). [58,59] Figure 5f shows that SDP-PCE M effectively inhibits both nonradiative and charge transfer loss, resulting in an FF of 84.86%. Predominantly, SDP-FF M , because of effectively inhibiting nonradiative loss and reducing charge transfer loss to a greater extent, thus significantly enhancing FF up to 86.0%, corresponding to 95.6% of the thermodynamic limit of its bandgap (Table S8, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…Excess PbI 2 can undermine device stability and increase the perovskite bandgap because of the strong quantum confinement in perovskite/PbI 2 [77,78] . You et al converted excess PbI 2 into inactive (PbI 2 ) 2 RbCl to reduce the ion migration rates from 4.2 × 10 8 and 3.3 × 10 −3 s −1 at an operating temperature of 50°C [63] , decrease the bandgap of perovskite (the PL peak was red-shifted from 805 to 810 nm), and passivate the perovskite surface to enhance the carrier lifetime from 0.98 to 2.3 μs by doping RbCl into PbI 2 precursor solution. Finally, the optimal device obtained a certificated PCE of 25.6%.…”
Section: Additive Strategies In the Two-step Spincoating Processmentioning
confidence: 99%
“…[1][2][3] The power conversion efficiency (PCE) of planar IPSCs has jumped from 3.9 % in 2013 [4] to certified 26.1 % in 2023, [5] and the operational stability of IPSCs has exceeded thousands of hours in lab level. [6][7][8] The rapid development of IPSCs benefits from the emergence and application of abundant p-type organic hole-transporting materials (HTMs) including organic small molecules [9][10][11][12] and conjugated conductive polymers, [13][14][15] which can replace the traditional inorganic HTMs, such as nickel oxide (NiO X ), [16] cuprous oxide (Cu 2 O) [17] and copper thiocyanate (CuSCN). [18] Compared with organic conjugated conductive polymer HTMs, small molecular HTMs have the superior batch stability and the variously tailored chemical structures to form a self-limiting functional layer on transparent conductive oxide electrode (TCO) substrate by forming chemical bond, and thus catering the requirements of constructing high performance PSCs [6][7][8][9][10][11][12] (such as forming the matched energy band structure at perovskite/hole-transporting layer (HTL) interface, regulating perovskite crystallization and growth, passivating interface/surface defects and releasing interface strain, etc.…”
Section: Introductionmentioning
confidence: 99%