Recent
breakthroughs in two-dimensional (2D) van der Waals ferroelectrics
have been impressive, with a series of 2D ferroelectrics having been
realized experimentally. The discovery of ferroelectric order in atom-thick
layers not only is important for exploring the interplay between dimensionality
and ferroelectric order but may also enable ultra-high-density memory,
which has attracted significant interest. However, understanding of
2D ferroelectrics goes beyond simply their atomic-scale thickness.
In this Perspective, I suggest possible innovations that may resolve
a number of conventional issues and greatly transform the roles of
ferroelectrics in nanoelectronics. The major obstacles in the commercialization
of nanoelectronic devices based on current ferroelectrics involve
their insulating and interfacial issues, which hinder their combination
with semiconductors in nanocircuits and reduce their efficiency in
data reading/writing. In comparison, the excellent semiconductor performance
of many 2D ferroelectrics may enable computing-in-memory architectures
or efficient ferroelectric photovoltaics. In addition, their clean
van der Waals interfaces can greatly facilitate their integration
into silicon chips, as well as the popularization of nondestructive
data reading and indefatigable data writing. Two-dimensional ferroelectrics
also give rise to new physics such as interlayer sliding ferroelectricity,
Moiré ferroelectricity, switchable metallic ferroelectricity,
and unconventional robust multiferroic couplings, which may provide
high-speed energy-saving data writing and efficient data-reading strategies.
The emerging 2D ferroelectric candidates for optimization will help
resolve some current issues (e.g., weak vertical
polarizations), and further exploitation of the aforementioned advantages
may open a new era of nanoferroelectricity.