Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

Abstract

Abstract. Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Sibased converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

Evaluation of photovoltaic power generation system using spherical silicon solar cells and SiC-FET inverter

“…The difference showed positive values above 20 W, and the conversion efficiency was improved up to 2% by replacing SiC-FET. This value was similar to our previous study [15]. The main reason for the improvement of the conversion efficiency is considered to be power loss in the SiC-FET inverter.…”

“…It is known that the power loss is determined by the sum of conduction loss and switching loss, and the conduction loss depends on the on-resistance of FET [16]. In the present study, the power loss decreased due to decrease by replacing Si-FET (Ron = 270 m ) with SiC-FET (Ron = 156 m ) [15]. The resistive loss in the circuit of the SiC-FET inverter would be considered as the reduction of electrical current.…”

“…As described in our previous report [15], spherical Si solar panels (CVFM-0540T2-WH, Clean Venture 21) were used as a power source. Generated voltage was almost constant (~14 V), and input/output power strongly depended on the intensity of natural sunlight.…”

“…In our previous work, spherical Si solar cell systems combined with a direct current-alternating current (DC-AC) inverter using SiC field-effect transistor (FET) were constructed [15].…”

Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

“…The SiC devices can be operated at higher temperatures of ~600 °C without much change in their electrical properties compared with Si devices (~200 °C). The SiC devices are one of the leading candidates of next generation power devices [6][7][8][9][10][11][12][13][14].…”