2019
DOI: 10.1016/j.apsusc.2019.05.257
|View full text |Cite
|
Sign up to set email alerts
|

Construction of Ag SPR-promoted step-scheme porous g-C3N4/Ag3VO4 heterojunction for improving photocatalytic activity

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
49
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 163 publications
(49 citation statements)
references
References 66 publications
0
49
0
Order By: Relevance
“…The construction of MoO3-x-based composite photocatalysts with type-II, Z-scheme, or S-scheme heterostructures has been evidenced as an effective tactic to simultaneously realize the expansion of light adsorption and the enhancement of spatial charge separation to improve photocatalytic H2 evolution performance [24][25][26][27][28]. The advantage of Z-scheme and S-scheme heterostructures over traditional type-II heterostructures is that the photoexcited electrons preserved at higher reduction potentials would take part in water-splitting reactions, which is beneficial for achieving higher photocatalytic reaction efficiency [29][30][31][32]. It is worth mentioning that the migration distance between the electrons and holes can be further shortened in the S-scheme due to band bending caused by the internal electric field of the semiconductors, leading to faster separation of the photo-induced carriers in comparison to the Z-scheme [33].…”
Section: Introductionmentioning
confidence: 99%
“…The construction of MoO3-x-based composite photocatalysts with type-II, Z-scheme, or S-scheme heterostructures has been evidenced as an effective tactic to simultaneously realize the expansion of light adsorption and the enhancement of spatial charge separation to improve photocatalytic H2 evolution performance [24][25][26][27][28]. The advantage of Z-scheme and S-scheme heterostructures over traditional type-II heterostructures is that the photoexcited electrons preserved at higher reduction potentials would take part in water-splitting reactions, which is beneficial for achieving higher photocatalytic reaction efficiency [29][30][31][32]. It is worth mentioning that the migration distance between the electrons and holes can be further shortened in the S-scheme due to band bending caused by the internal electric field of the semiconductors, leading to faster separation of the photo-induced carriers in comparison to the Z-scheme [33].…”
Section: Introductionmentioning
confidence: 99%
“…Jia et al [57] prepared a high-efficiency step-scheme AgI/I-BiOAc photocatalyst, which showed 50 times higher catalytic activity than AgI. Mei et al [58] investigated the catalytic performance of a g-C3N4/Ag3VO4 heterostructure for the degradation of MB. They found that the photocatalytic activity of the coupled semiconductor was higher than those of pure g-C3N4 and Ag3VO4.…”
Section: Introductionmentioning
confidence: 99%
“…Such type‐II heterojunctions efficiently separate the photogenerated carriers and prolong their lifetime for surface catalysis; however, the type‐II charge transfer path undoubtedly weakens the redox ability of electrons and holes in a photocatalytic system from the view point of thermodynamics . Recently, a novel step‐scheme (S‐scheme) heterojunction has been proposed to elucidate the enhanced photocatalytic activity of heterojunction photocatalysts; the S‐scheme achieves efficient electron‐hole separation and retains the promising redox ability of photoinduced charge carriers . For a typical S‐scheme heterojunction, an internal electric field (IEF) usually exists at the interfaces, which forces the electrons in the conduction band (CB) of one semiconductor to flow to the valance band (VB) of the other semiconductor, showing an S‐scheme transfer pathway.…”
Section: Introductionmentioning
confidence: 99%