2023
DOI: 10.1016/j.snb.2023.133308
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Construction of MOF-derived In2O3/g-C3N4/rGO nanostructures to enhance NOx gas-sensitive properties at room temperature

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Cited by 15 publications
(3 citation statements)
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“…Specifically, the diffraction peaks at 21.5°, 30.6°, 35.4°, 51.0°and 60.7°c orrespond to the (211), ( 222), ( 400), ( 134), ( 440) and (622) crystal faces of In 2 O 3 , respectively. However, no significant diffraction peaks belonging to rGO (2θ = 24°, 42.8°) can be observed in rGO/In 2 O 3 and Ar-rGO/In 2 O 3 , which may be related to the low amount and low diffraction intensity of rGO [17][18][19]. Meanwhile, it's worth noting that, after rGO modification and Ar plasma treatment, the peaks of In 2 O 3 don't show significant weakening and broadening, suggesting that both strategies don't have a noticeable effect on the crystal structure.…”
Section: Materials Characterizationmentioning
confidence: 89%
“…Specifically, the diffraction peaks at 21.5°, 30.6°, 35.4°, 51.0°and 60.7°c orrespond to the (211), ( 222), ( 400), ( 134), ( 440) and (622) crystal faces of In 2 O 3 , respectively. However, no significant diffraction peaks belonging to rGO (2θ = 24°, 42.8°) can be observed in rGO/In 2 O 3 and Ar-rGO/In 2 O 3 , which may be related to the low amount and low diffraction intensity of rGO [17][18][19]. Meanwhile, it's worth noting that, after rGO modification and Ar plasma treatment, the peaks of In 2 O 3 don't show significant weakening and broadening, suggesting that both strategies don't have a noticeable effect on the crystal structure.…”
Section: Materials Characterizationmentioning
confidence: 89%
“…Consequently, there is a growing need for nitrogen oxide gas detectors characterized by high sensitivity, selectivity and stability. Various methods of NO X detection have been published, including electrochemical gas sensors [ 11 , 12 , 13 ], optical gas sensors [ 14 ], and semiconductor gas sensors [ 15 , 16 , 17 ]. Compared with alternative gas sensors, semiconductor gas detectors display heightened sensitivity and affordability.…”
Section: Introductionmentioning
confidence: 99%
“…SnO 2 -Sn 3 O 4 materials with heterostructures were prepared by Zeng et al 11 using the solvothermal method and annealing, and their special layered microsphere structure and the formation of heterojunctions enabled them to exhibit high sensitivity and excellent selectivity for NO 2 . Liu et al 12 successfully prepared In 2 O 3 /g-C 3 N 4 /rGO composites by the solvothermal method. The effective combination of In 2 O 3 hollow nanotubes, g-C 3 N 4 nanosheets and rGO nanosheets resulted in the formation of a heterojunction structure.…”
Section: Introductionmentioning
confidence: 99%