Construction of n-SnO2 microwire/p-InGaN heterojunction for self-powered and broadband photodetector

Self-Driven Gr/WSe2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts

“…Figure b depicts the comparison of I light / I dark and τ of this device with various reported self-driven photodetectors. The asymmetric Gr/WSe 2 /Gr device in this work exhibits an ultrahigh light I light / I dark ratio and rapid response, which is superior to most photodetectors. − Table S1 (Supporting Information) illustrates the optical response performance comparison of the Gr/WSe 2 /Gr device with different photodetectors in detail. It can be noted that the device’s response speed and R (at V ds = −0.8 V), especially the I light / I dark ratio, are superior, but the R at V ds = 0 V is not high.…”

Highly Monochromatic Ultraviolet LED Based on the SnO2 Microwire Heterojunction Beyond Dipole-Forbidden Band-Gap Transition

“…The XRD analysis in Figure d illustrates that three sharp diffraction peaks centering at 33.66, 37.69, and 51.79°, respectively, can be readily indexed to the (101), (200), and (211) planes of the tetragonal rutile SnO 2 structure (JCPDS No. 41-1445). ,, The smaller values of the diffraction peaks may be ascribed to the lattice expansion caused by the substitution of Sn 4+ ions by Sb 3+ ones in the crystal lattice as their ionic radii mismatch (ionic radius of Sn 4+ ∼0.74 Å and that of Sb 3+ ∼0.93 Å). − The crystallographic structure of the SnO 2 :Sb MWs was characterized using high-resolution TEM and selected-area electron diffraction (SAED). From Figure e, one can see that the magnified TEM observation exhibits a periodic arrangement of the lattice.…”

“…Employing a commercially purchased p-GaN planar substrate as a hole supplier, the p–n heterojunction light-emitting device was conducted by combining a single SnO 2 :Sb MW. The construction process can be seen and referred in the following parts. , (1) Ni/Au nanofilms with a thickness of 45/50 nm were deposited onto the p-GaN substrate using electron beam evaporation via a shadow mask. Ohmic contact between the GaN film substrate and the deposited metal film was formed after annealing treatment.…”

“…The furnace was heated to 1100 °C within 1 h and kept at this temperature for 1 h. As the reaction was accomplished, the furnace was cooled to room temperature naturally under an Ar flow. The final products could be collected in the inwall of a corundum boat. − …”

An ultraviolet, self-powered, and large area photodetector based on a n-SnO2/p-spiro-OMeTAD organic–inorganic heterojunction

“…[10][11][12] A self-powered photodetector on the basis of a n-SnO 2 microwire/p-InGaN IH was constructed, and it responded to ultraviolet-visible (330-530 nm) light irradiation. 13 In addition, a photodetector based on SnO 2 /NiO IH was fabricated by depositing NiO using magnetron sputtering and SnO 2 using the electron beam evaporation technique. 14 Introducing an In 2 O 3 interlayer into SnO 2 /SnS 2 IH was also designed.…”