2020
DOI: 10.1016/j.jcis.2020.01.102
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Construction of phosphorus-doped carbon nitride/phosphorus and sulfur co-doped carbon nitride isotype heterojunction and their enhanced photoactivity

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Cited by 47 publications
(15 citation statements)
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“…The difference in band gap energy and band edge positions of pristine g-C 3 N 4 and doped carbon nitride isotype heterojunction can afford better interlayer charge separation. , Such isotype heterojunction can be synthesized using two approaches: (1) in situ method creating doped sheets within materials, and (2) mixing doped and nondoped g-C 3 N 4 after synthesis or growth of one on another by annealing. g-C 3 N 4 /doped g-C 3 N 4 type 2D/2D vdW structures can afford better charge separation due to lattice match and differential band structure. Since inorganic 2D semiconductors are hard to synthesize and in many cases get photobleached under solar excitation, it is desirable to develop a stable heterojunction between carbon nitride and the doped carbon nitride to resolve the stability issue while minimizing synthesis cost. Qin et al reported the synthesis of S-doped g-C 3 N 4 and porous g-C 3 N 4 isotype heterojunction via an in situ approach using thiourea as a sulfur source for improved visible light H 2 evolution . In another work, carbon nitride nanosheets (CNS) were prepared by thermal annealing of trithiocyanuric acid (TCA), and then CN was grown on these sheets by further annealing with dicyandiamide.…”
Section: Carbon Nitride–carbon Nitride 2d/2d Vdw Structuresmentioning
confidence: 99%
“…The difference in band gap energy and band edge positions of pristine g-C 3 N 4 and doped carbon nitride isotype heterojunction can afford better interlayer charge separation. , Such isotype heterojunction can be synthesized using two approaches: (1) in situ method creating doped sheets within materials, and (2) mixing doped and nondoped g-C 3 N 4 after synthesis or growth of one on another by annealing. g-C 3 N 4 /doped g-C 3 N 4 type 2D/2D vdW structures can afford better charge separation due to lattice match and differential band structure. Since inorganic 2D semiconductors are hard to synthesize and in many cases get photobleached under solar excitation, it is desirable to develop a stable heterojunction between carbon nitride and the doped carbon nitride to resolve the stability issue while minimizing synthesis cost. Qin et al reported the synthesis of S-doped g-C 3 N 4 and porous g-C 3 N 4 isotype heterojunction via an in situ approach using thiourea as a sulfur source for improved visible light H 2 evolution . In another work, carbon nitride nanosheets (CNS) were prepared by thermal annealing of trithiocyanuric acid (TCA), and then CN was grown on these sheets by further annealing with dicyandiamide.…”
Section: Carbon Nitride–carbon Nitride 2d/2d Vdw Structuresmentioning
confidence: 99%
“…The increased lifetime in the PMC composite suggests that the photogenerated electrons modified by Pt and MoS 2 cocatalysts offered more opportunities to participate in the H + reduction and thereby enhanced the photocatalytic performance. 48,49 According to the abovementioned characterization and discussion, a proposed mechanism of the enhancement of photocatalytic hydrogen production performance over PC and PMC composites is presented in Figure 11. For the PC composite, the photogenerated electrons will transfer to the surface of Pt nanoparticles since the conduction band of g-C 3 N 4 was more negative than the Fermi level of Pt, which improved the photocatalytic performance of g-C 3 N 4 .…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Similar conclusions are also reported by other research groups. 35–37 Doping of other non-metallic elements, such as B, 38–48 P, 49–59 S, 60–66 and so on, can also be characterized by XPS measurements.…”
Section: Confirmation Of Doped Elements In G-cnmentioning
confidence: 99%
“…Similar conclusions are also reported by other research groups. [35][36][37] Doping of other non-metallic elements, such as B, [38][39][40][41][42][43][44][45][46][47][48] P, [49][50][51][52][53][54][55][56][57][58][59] S, [60][61][62][63][64][65][66] and so on, can also be characterized by XPS measurements. Although the bond types of heteroatoms can be easily determined by the XPS peak positions, these characteristic peaks can be affected by some factors.…”
Section: Introductionmentioning
confidence: 99%