Construction of Various One-Dimensional ZnS/MnS Heteronanostructures with Varied Diameters via the Multistep Solution–Solid–Solid Growth Method

Zhang, Yongliang; Xue, Yi; Qi, Kang; Ru, Zehao; Cai, Jiwen; Chen, Wei

doi:10.1021/acs.inorgchem.1c03431

Cited by 9 publications

(3 citation statements)

References 35 publications

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“…Their unique properties, such as high aspect ratio, large surface-to-volume ratio, and quantum confinement effects, have made nanowires indispensable for diverse technological advancements [ 6 , 7 ]. The influence of nanowire size at the nanoscale level induces substantial changes in optical and electronic properties, leading to notable alterations in bandgap and electrical characteristics [ 8 , 9 ]. Consequently, precise control over material phase composition and phase transition processes during nanowire synthesis significantly influences their structural, electronic, and mechanical attributes.…”

Section: Introductionmentioning

confidence: 99%

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Alangadu Kothandan,

Shao-Fu,

Zhong-You

et al. 2023

Heliyon

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Section: Introductionmentioning

confidence: 99%

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Alangadu Kothandan,

Shao-Fu,

Zhong-You

et al. 2023

Heliyon

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“…[ 17 ] Additionally, it was reported that the metal‐dithiocarbamate complex had sufficiently high reactivity to produce metal sulfides. [ 9,22–26 ]…”

Section: Introductionmentioning

confidence: 99%

“…[17] Additionally, it was reported that the metal-dithiocarbamate complex had sufficiently high reactivity to produce metal sulfides. [9,[22][23][24][25][26] Based on the above considerations, here, the luminescent AgInS 2 @In 2 S 3 core@shell nanoparticles were fabricated via the reaction of preformed Ag…”

Section: Introductionmentioning

confidence: 99%

Ag₂S Nanoparticles Evolved into Luminescent AgInS₂@In₂S₃ Heteronanoparticles through Dual Formation Mechanism

Zhang

Chen

Liu

et al. 2022

Part & Part Syst Charact

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cadmium chalcogenide had been intensely studied since the 1980s, [4] its toxic character limited its wide application, and the IB-IIIA-VIA 2 semiconductors had been regarded as the promising alternatives for Cd-free chalcogenide nanometeirals. [3] Among IB-IIIA-VIA 2 materials, the AgInS 2 nanostructures with direct band gap exhibited strong photoluminescence (PL) in the visible-light wavelength region and had attracted extensive attention in recent research. [5][6][7][8][9] Moreover, it was found that the PL properties of AgInS 2 nanostructures were strongly influenced by the defects, such as the non-irradiative recombination of excited carriers trapped by surface defects (e.g., the dangling bonds on the nanomaterial surface), or the donor-acceptor levels and/or surface traps resulted in the defect emission, [10,11] which was characterized by the large stokes shift and broad emission spectrum. For the application of AgInS 2 nanostructures, how to eliminate defect emission and enhance band edge emission was a very important topic. Recently, it had been reported that coating the IIIA-VIA group semiconductor (e.g., InS x or GaS x ) on AgInS 2 core could remove the defect emissions and generate intense narrow band-edge emission of AgInS 2 . [7,9,12,13] Besides, using the organic ligands such as the trioctylphosphine to modify the surface of the AgInS 2 nanoparticles could also improve its band-edge emission, which could be attributed to the irradiative carrier trapping sites passivated by trioctylphosphine bonds. [14] Developing new strategy for synthesizing AgInS 2 nanostructures with the band-edge emission is challenging and significant for their wide application in optoelectronics.The AgInS 2 existed in two crystal forms, including the metastable orthorhombic phase usually formed above 620 °C and the stable tetragonal (chalcopyrite) phase formed below 620 °C, with the bulk bandgaps of 1.98 and 1.87 eV, respectively. [15] The AgInS 2 could be synthesized using various precursors via many methods, including hot injection and thermo-decomposition using the molecular organic metal precursors, [7,9,16] partial cation exchange using the binary Ag 2 S nanoparticles and molecular In 3+ -precursor, [17] reaction of the Ag 2 S nanoparticles as the source-host with In-S precursor, [18] and partial cation exchange using the binary In 2 S 3 nanocrystals and molecular Ag + -precursor. [19] Actually, in the hot injection A deep understanding of the growth kinetics and mechanism of metal sulfide nanostructure is helpful in preparing nanomaterials with controllable structures.

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Solution‐Processed 1D Wurtzite ZnS Nanostructures with Controlled Crystallographic Orientation and Tunable Band‐Edge Emission

Cai,

Liu,

Lei

et al. 2023

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Abstract1D compound semiconductor nanomaterials possess unique physicochemical properties that strongly depend on their size, composition, and structures. ZnS has been widely investigated as one of the most important semiconductors, and the control of crystallographic orientation of 1D ZnS nanostructures is still challenging and crucial to exploring their anisotropic properties. Herein, a solution‐processed strategy is developed to synthesize 1D wurtzite (w‐)ZnS nanostructures with the specific <002> and <210> orientations by co‐decomposing the copper dibutyldithiocarbamate {[(C4H9)2NCS2]2Cu, i.e., R2Cu} and zinc dibutyldithiocarbamate (R2Zn) precursors in the mixed solvents of oleylamine and 1‐dodecanethoil. A solution–solid–solid (SSS)‐Oriented growth mechanism is proposed, which includes oriented nucleation dominated and SSS growth dominated stages. The crystallographic orientation mainly depends on the interfacial energy and ligand effect. The 1D w‐ZnS nanostructures with controlled crystallographic orientation display unique morphologies, i.e., <002>‐oriented w‐ZnS nanorod enclosed with {110} facets while <210>‐oriented w‐ZnS nanobelt enclosed with wide (002) and narrow (110) facets. The bandgap of 1D w‐ZnS nanostructures can be tuned from 3.94 to 3.82 eV with the crystallographic growth direction varied from <002> to <210>, thus leading to the tunable band‐edge emission from ≈338 to ≈345 nm.

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Construction of Various One-Dimensional ZnS/MnS Heteronanostructures with Varied Diameters via the Multistep Solution–Solid–Solid Growth Method

Cited by 9 publications

References 35 publications

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Ag₂S Nanoparticles Evolved into Luminescent AgInS₂@In₂S₃ Heteronanoparticles through Dual Formation Mechanism

Solution‐Processed 1D Wurtzite ZnS Nanostructures with Controlled Crystallographic Orientation and Tunable Band‐Edge Emission

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Construction of Various One-Dimensional ZnS/MnS Heteronanostructures with Varied Diameters via the Multistep Solution–Solid–Solid Growth Method

Cited by 9 publications

References 35 publications

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

Ag2S Nanoparticles Evolved into Luminescent AgInS2@In2S3 Heteronanoparticles through Dual Formation Mechanism

Solution‐Processed 1D Wurtzite ZnS Nanostructures with Controlled Crystallographic Orientation and Tunable Band‐Edge Emission

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Ag₂S Nanoparticles Evolved into Luminescent AgInS₂@In₂S₃ Heteronanoparticles through Dual Formation Mechanism