2018
DOI: 10.3897/j.moem.4.4.39503
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Contact and contactless porous silicon parameter measurement techniques

Abstract: In this work we have used contact and contactless techniques to measure the electrical resistivity of single crystal silicon wafers with porous layers of variable thickness synthesized on the surface. The porous layers have been synthesized on the surfaces of single crystal wafers with well pronounced microroughness pattern, either textured or grinded. We have used the classic four-probe method with a linear probe arrangement as the contact measurement technique, and the resonance microwave method based on mic… Show more

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