Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Abstract

Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10−5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10−6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.

Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2

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Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

“…2D MOSFETs and emerging FETs can be used in logic circuits with minimal static power consumption while performing XOR, NAND, and NOR gates. Recent advancements in doping techniques and contact engineering , result in the control of p - and n -type polarity, or ambipolarity, in 2D MOSFETs, facilitating the realization of high-performance inverters using two FET devices with minimal power-delay products per bit. Furthermore, reconfigurable ambipolarity in a 2D MOSFET with dual or multiple gates enables logic gates with static CMOS connections, guaranteeing speed performance in future circuit design. , Reconfigurable 2D MOSFETs also introduce CMOS inverters for logic gates ,, and multiple analogue encoders for data transmissions …”

Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

“…Channel materials for RFETs that initially exhibit ambipolar behavior, encompassing conventional materials such as silicon ,, and germanium, − as well as organic semiconductors , and two-dimensional (2D) materials, − have been extensively studied. Recently, the focus of semiconductor research has shifted to 2D materials, propelled by a growing enthusiasm to surpass the current limitations of semiconductor technology, particularly in the context of scaling.…”