Abstract:We present an in-depth electrical characterization of contact resistance in carbon nanostructure via interconnects. Test structures designed and fabricated for via applications contain vertically aligned arrays of carbon nanofibers (CNFs) grown on a thin titanium film on silicon substrate and embedded in silicon dioxide. Current-voltage measurements are performed on single CNFs using atomic force microscope current-sensing technique. By analyzing the dependence of measured resistance on CNF diameter, we extrac… Show more
“…However, contact resistance between CNT or CNF and metal remains a major challenge [2][3][4][5][6][7]. Moreover, contact resistance tends to dominate the total test device resistance [6,7].…”
mentioning
confidence: 99%
“…Moreover, contact resistance tends to dominate the total test device resistance [6,7]. Previously, Wu [6] and Li [7] developed methods to extract contact resistance between CNF and underlayer metal in vertical via structures.…”
Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for the most advanced silicon devices and circuits due to their excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds promise for applications as on-chip interconnects.
“…However, contact resistance between CNT or CNF and metal remains a major challenge [2][3][4][5][6][7]. Moreover, contact resistance tends to dominate the total test device resistance [6,7].…”
mentioning
confidence: 99%
“…Moreover, contact resistance tends to dominate the total test device resistance [6,7]. Previously, Wu [6] and Li [7] developed methods to extract contact resistance between CNF and underlayer metal in vertical via structures.…”
Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for the most advanced silicon devices and circuits due to their excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds promise for applications as on-chip interconnects.
“…Though field emission from carbon fibers has been known since 1973 [23], it was first in 1995 when a carbon nanotube based field emission electron source has been reported [30]. The device had an array of vertically aligned current density and stability of emission (figure 2.4).…”
Section: Carbon Nanotubes In Field Emittersmentioning
confidence: 99%
“…Recently, it has also been shown that the contact resistance has a diameter dependant component, which is inversely related to the resistance term [30]. Thus, it is expected that thinner CNTs will have higher contact resistance leading to reduced emission response.…”
Section: 6: Field Emission Responses Of Mwcnt Emitters On Ti-intermementioning
confidence: 99%
“…In last decade, carbon nanotube (CNT) was proposed as an excellent field emission material. Emission current and total energy distribution from different crystallographic planes of tungsten, with and without various gas adsorption on them [15][16][17][18][19] Experimental and theoretical analysis of emission of hot electrons [20] Field emission from tungsten nanowire [21] Multistage tungsten oxide nanowire and its field emission under poor vacuum condition [22] Carbon Field emission response from sharpened micro-size carbon fiber [23] Field emission from micro-and nano-sized diamond emitter arrays [24][25][26][27] Field emission from single wall-and multi wall-carbon nanotubes, in the form of arrays or individual nanotube [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] Field emission from single-layer, multi-layer and thick graphene structures [43][44][45][46][47][48][49] Silicon Large-area arrays of sharply-pointed field emitters on Si wafers [50] Molybdenum Closely packed arrays of micro-size Mo cones [51] Field emission from single crystalline MoO 3 nanobelts [52] Aluminum nitride…”
Section: Materials Used In Field Emittersmentioning
Wrinkling is a universal phenomenon in graphene transfer process and significantly degrades the electronic transport properties of graphene. Taking advantage of the special surface morphology of the growth substrate of copper foil, graphene is prepared with oriented wrinkles. Furthermore, the electronic transport properties are studied parallel and perpendicular to the wrinkles using cross‐shaped FET devices and it is found that the carrier mobility of graphene is anisotropic along these two directions. This discovery will help to prepare electronic devices with higher performance.
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