Contact resistance in Polytriarylamine based organic transistors

Bonea, Andreea; Bonfert, Detlef; Sauseng, Paul

doi:10.1109/isse.2011.6053901

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…Analytic models of OTFTs, as well as finite element models, have already been realized, as presented in [8][9][10]. In this paper, the model proposed is basic, which leads to increased flexibility.…”

Section: Simulationmentioning

confidence: 99%

LED switching module with organic devices

et al. 2012

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The paper aims to describe the fabrication of organic transistors and their integration into hybrid circuits on flexible substrates. Organic thin film transistors (OTFT) are fabricated using commercially available materials. The Au S-D electrodes are realized by photolithography, while the organic semiconductor and organic dielectric layers are spincoated. Finally, the Au gate electrode is evaporated in order to obtain a Bottom Contact Top Gate OTFT architecture. The paper presents a prototype realized in classic technology on rigid substrate, which is used to perform a PSpice simulation of the circuit. After the PSpice simulation, a module on PET substrate is made with organic transistors. Two transistors are employed to build the inverter used to switch the LED, while a third transistor is diode connected and acts as a 10MOhms resistor. The electrical characterization of the transistors and measurements onto the module are performed with a 4200 Keithley Semiconductor Analyzer. An SMD LED, in 0402 package, is used and all interconnections are done manually using Silver conductive paste, which dries at room temperature. The paper describes the circuit simulation and layout realization.

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Section: Simulationmentioning

confidence: 99%

LED switching module with organic devices

et al. 2012

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“…al., 2016). Many researchers have investigated regarding structural, morphological and optical combination of these organic-inorganic material to improve the device performances (Bonea, Bonfert & Svasta, 2011;Castro-Carranza et al 2012;Cho et al 2012;Sendner, Trollmann & Pucci, 2014;Smith et al 2009;Yadav, Singh & Tripathi, 2012 . The As the speed rate of the spin coating increases the PTAA layer is deposited uniformly onto the ZnO layer (Miandal et.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Electrical Properties of Hybrid ZnO/PTAA based Heterojunction Diode

2020

ASMSJ

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A hybrid type heterojunction diode based on Zinc Oxide (ZnO) and Poly(triarylamine)(PTAA) thin films is fabricated using radio frequency and spin coating method. These are conducted in ambient condition. This research is done to investigate the effects of temperature on Schottky properties of ZnO/PTAA diode. PTAA is chemically dissolved in chloroform solution and deposited onto ZnO thin film at different spin rate of 1000 RPM and 2000 RPM. The fabricated diode is then annealed for 20 mins at a temperature ranging from 100 °C to 150 °C and surface morphological of fabricated diodes is observed using advance material microscope (HIROX). Investigation of current-voltage (I-V) is carried out in various bias voltage from-4.0 V to 4.0 V using Keithley 4-point prob. Investigation revealed that, diode show rectifying behaviour towards the increasing in annealing temperature. The highest ideality factor obtain is 1.62 at 120°C for 1000 RPM with barrier height of 0.745 eV and series resistance of 2.645 KΩ. The barrier height of diodes increases gradually with increasing in temperature while ideality factor decreases. Meanwhile, series resistance decreases significantly over increasing temperature from 4.28 KΩ to 0.412 KΩ for 1000 RPM and 4.166 KΩ to 0.063 KΩ for 2000 RPM. It clearly reveals that the temperature is highly correlated with the ideality factor of the device thus effecting the barrier height and series resistance in the device.

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Influence of the organic transistors' layout on electrical parameters

Bonea

Bonfert

Busu

et al. 2012

2012 35th International Spring Seminar on Electronics Technology

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The paper aims to assess how the geometry of the organic thin film transistors (OTFTs) influences their electrical parameters. The transistors have polytriarylamine (PTAA) as semiconductor. Several geometries will be investigated for transistors fabricated in a single batch. These geometries include simple electrodes, inter-digitated electrodes and circular electrodes. The electrical parameters considered are threshold voltage, mobility, ON-OFF ratio, the sub-threshold swing and the contact resistance. All the measurements are performed with a calibrated semiconductor analyzer in accordance to the IEEE 1620 standard. The paper discusses the trade-off between the ease of fabrication and the increase in performance of these devices

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Contact resistance in Polytriarylamine based organic transistors

Cited by 6 publications

References 9 publications

LED switching module with organic devices

LED switching module with organic devices

Effect of Annealing Temperature on Electrical Properties of Hybrid ZnO/PTAA based Heterojunction Diode

Influence of the organic transistors' layout on electrical parameters

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