2018
DOI: 10.1088/1361-6463/aabf6b
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Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP

Abstract: N-type and p-type In 0.52 Al 0.48 As van Hoof structures with various thicknesses of undoped In 0.52 Al 0.48 As layer (30, 60, 90, and 120 nm) were grown using metal-organic vapor phase epitaxy on InP substrates and studied per their contactless electroreflectance (CER) at room temperature. InAlAs bandgap related CER resonance followed by a strong Franz-Keldysh oscillation (FKO) of various period was observed clearly in both structures. The period of this oscillation decreased with decreasing thickness of the … Show more

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