Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

Abstract

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In0.53Ga0.47As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.

Assessment of optical phonons in BeTe, BexZn1-xTe, p-BeTe epilayers and BeTe/ZnTe/GaAs (001) superlattices

“…This is simply because the TO modes in the RSS near backscattering geometry [13] are either forbidden or appear weak and difficult to identify amidst disorder induced phonon continuum. In thin films, the p-polarized FIR transmission studies have been successfully ) coupled modes to estimate the charge carrier concentration  in n-and/or p-doped samples [18]. Such experimental studies have not been performed either on ultrathin BZT/GaAs (001) epilayers or N-doped BeTe samples.…”