Contamination of Magnetron Sputtered Metallic Films by Oxygen From Residual Atmosphere in Deposition Chamber

Abstract

The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1 mPa only.

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

“…Using SIMS analyses, Cabanas et al [22] have quantified a carbon and oxygen content lower than 0.1 at.% in SCFD films (scCO2 and ethanol or hydrogen as reducing agent). Optimized process parameters for magnetron sputtering (reduced base pressure, limitation of O + and ions generated in the magnetron discharge able to react with metallic atoms, target power, deposition rate…) also helps to reduce oxygen and nitrogen contamination in films [5,18,29]. Table 1 presents the film thickness and the average crystallite size.…”

Tailor-made preparation of Co–C, Co–B, and Co catalytic thin films using magnetron sputtering: insights into structure–composition and activation effects for catalyzed NaBH4hydrolysis

“…The presence of a certain amount of oxygen in the Co deposited coatings is unavoidable because of the presence of oxygen and water in the residual vacuum. 31 It is also characteristic for columnar coatings to have a certain degree of inter-columnar porosity, which also favors a post-deposition oxidation. 32 Nevertheless, the presence of oxygen is a characteristic of powdery Co-based catalysts for this reaction.…”

Study the Effect of ZnO/Cu/ZnO Multilayer Structure by RF Magnetron Sputtering For Flexible Display Applications

“…ZnO and Cu have work function of 5.4 eV and 4.5 eV respectively. [39] It is clear from the figure that the work function of copper is lower than the ZnO film and an accumulation layer form at the interface due to transfer of electrons from the metal to the semiconductor. Energy band diagram of the Cu/ZnO structure under isolation and interfaced shown in Fig.…”