Contention resolution in dense WDM-PON networks by incorporating fiber temporal delay approach

Sachdeva, Shippu; Malhotra, Jagjit Singh; Kumar, Manoj

doi:10.1007/s11082-021-03216-z

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…In This paper, we used the Latest Available Unscheduled Channel with Void Filling (LAUC-VF) algorithm [16,17] with each of the JIT and JET signaling schemes. This algorithm aims to improve channel utilization by minimizing the voids between bursts.…”

Section: Channel Schedulingmentioning

confidence: 99%

Performance Comparison of JIT and JET Protocols on the OBS Networks

Jamal

Zaiter

2022

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Over the past few years, internet traffic has been explosive growth due to users' need for more applications and services. All these developments on the internet need more bandwidth. The Optical Burst Switching (OBS) mechanism along with Wavelength-Division-Multiplexing (WDM) technology is very useful in meeting the high bandwidth requirements. However, the OBS network uses a one-way resource reservation mechanism, as well as it is a buffer lack at the intermediate (core) node. Therefore, the OBS network depends on contention resolution mechanisms to achieve acceptable levels of performance. In this paper, the Deflection Routing (DR) mechanism is used to overcome contention. The performance of the OBS network has been estimated by executing Just-In-Time (JIT) and Just-Enough-Time (JET) signaling reservation protocols with the DR. NCTUns-6.0 simulator was employed to verify the performance of the OBS network based on two metrics: throughput and packets dropped in the network. The results show that the bandwidth resources utilization in the OBS network with JET and DR (OBS-JET-DR) is better than in the OBS network with JIT and DR (OBS-JIT-DR). However, the average number of packets dropped in OBS-JET-DR is less than OBS-JIT-DR by 21%. In addition, the throughput of OBS-JET-DR has increased by 4% compared with OBS-JIT-DR.

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Section: Channel Schedulingmentioning

confidence: 99%

Performance Comparison of JIT and JET Protocols on the OBS Networks

Jamal

Zaiter

2022

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Photoelectric Computer Simulation of Cu₂O/WO₃Composite Semiconductor Materials

Liu¹

2022

Journal of Nanoelectronics and Optoelectronics

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Cuprous oxide (Cu2O) is a P-type semiconductor material with a narrow forbidden band and shows good optoelectronic performance. Due to the easy composition of photo-induced electrons and holes in Cu2O, the photocatalytic activity is reduced, so it is necessary to reduce the composition of photo-induced electrons and holes in Cu2O to improve its optoelectronic performance. In this work, nano-Cu2O and Cu2O/tungsten trioxide (WO3) composite semiconductor films were first prepared by anodization. Nano-Cu2O/WO3 composite semiconductors can be obtained in both alkaline solution and acidic solution. Among them, the granular Cu2O/WO3 composite film can be obtained by annealing treatment at 370 °C after anodization at 10 V voltage in the alkaline solution, and its photocurrent density is 50 times that of pure Cu2O film. The flaky Cu2O/WO3 composite film can be obtained by annealing treatment at 400 °C after anodization at 0.8 V voltage in the acid solution, and its photocurrent density is 17 times that of pure Cu2O film. The Cu2O/WO3 composite film prepared in the acid solution is taken to peel off the single-layer film by the micromechanical exfoliation method, and to construct the semiconductor optoelectronic device based on single-layer Cu2O/WO3 by photolithography micromachining technology. The nano-film device is irradiated with different wavelengths of laser light, and it is found that Cu2O/WO3 shows excellent photosensitivity. In addition, the current changes greatly under blue-violet light irradiation and changes slightly under red light irradiation. The field effect transistor based on single-layer Cu2O/WO3 is constructed, and its field effect transport performance is affected by the adsorption of water molecules. The results reveal that with the increase of relative humidity, the conductivity and switching voltage of the optoelectronic device increase accordingly.

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Photoelectric Properties of Titanium Dioxide/Graphene Quantum Dots Semiconductor Material and its Computer Simulation

Liu¹

2022

Journal of Nanoelectronics and Optoelectronics

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As an excellent inorganic semi-conductor material, titanium dioxide (TiO2) is widely applied in some photo-induced hardware designs. The energy gap with 3.0 eV to 3.2 eV enables TiO2 to respond only to the incident light of ultraviolet band, while TiO2 can’t effectively utilize visible light. Therefore, TiO2 needs to be modified to reduce the overall energy gap. Graphene quantum dots (GQDs) is adopted to modify TiO2 and further made into photoelectrode hardware devices. In this case, the energy gap of GQDs is measured by cyclic voltammetry, and it reaches only 1.18 eV. GQDs can directly absorb visible light photons and then transform them into electrons. After that, electrons are transmitted into TiO2 conduction band (CB) to form photocurrents. In the experiment, computers are utilized in simulation to change reaction conditions. The photoelectric properties of the materials adopted to prepare GQDs-TiO2 devices are different. Compared with single anatase or rutile type TiO2, mixed crystal TiO2 possesses better photoelectric property as photo-anode material. In the prepared semi-conductor device (GQDs-TiO2), the nitrogen content in the composition of GQDs is increased to further enhance the photoelectric property of devices. The change of the wavelength of incident light shows that the photons between 430 nm and 476 nm wavebands and in the wavebands above 526 nm can effectively enhance photocurrents. The introduction of GQDs reduces the energy gap of prepared photoelectric devices and enabled the prepared devices to respond to high-wavelength photons. GQDs-TiO2 photoelectrode devices with 3 times nitrogen content show the best photoelectric enhancement effects at 750 °C.

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Contention resolution in dense WDM-PON networks by incorporating fiber temporal delay approach

Cited by 3 publications

References 10 publications

Performance Comparison of JIT and JET Protocols on the OBS Networks

Performance Comparison of JIT and JET Protocols on the OBS Networks

Photoelectric Computer Simulation of Cu₂O/WO₃Composite Semiconductor Materials

Photoelectric Properties of Titanium Dioxide/Graphene Quantum Dots Semiconductor Material and its Computer Simulation

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Contention resolution in dense WDM-PON networks by incorporating fiber temporal delay approach

Cited by 3 publications

References 10 publications

Performance Comparison of JIT and JET Protocols on the OBS Networks

Performance Comparison of JIT and JET Protocols on the OBS Networks

Photoelectric Computer Simulation of Cu2O/WO3Composite Semiconductor Materials

Photoelectric Properties of Titanium Dioxide/Graphene Quantum Dots Semiconductor Material and its Computer Simulation

Contact Info

Product

Resources

About

Photoelectric Computer Simulation of Cu₂O/WO₃Composite Semiconductor Materials