Continued development of thallium bromide and related compounds for gamma-ray spectrometers

Kim, H.; Churilov, A.; Ciampi, Guido; Cirignano, L.; Higgins, William E.; Kim, S.; O’Dougherty, P.; Olschner, F.; Shah, K.S.

doi:10.1016/j.nima.2010.10.097

Cited by 28 publications

(8 citation statements)

References 18 publications

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“…Polarization and charge trapping degrade the spectral performance of HgI 2 [4], yet, detectors with single pixel resolution below 1% FWHM at 662 KeV were reported [5]. TlBr is attracting renewed interest for gamma ray spectroscopy [6,7] as techniques are being developed to address polarization in biased sensors [8,9,10,11,12]. Single pixel resolution on the order of 1% FWHM at 662 keV was reported at 20 • C where the detector showed stable performance [13,14].…”

Section: Introductionmentioning

confidence: 99%

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

Vernon

Geronimo

Bolotnikov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Compact multi-channel radiation detectors rely on low noise front-end application specific integrated circuits (ASICs) to achieve high spectral resolution. Here, a new ASIC developed to readout virtual Frisch-grid cadmium zinc telluride (VFG CZT) detectors for gamma ray spectroscopy is presented.Corresponding to each ionizing event in the detector, the ASIC measures the amplitude and timing at the anode, the cathode and four pad sense electrodes associated with each sensor in a detector array. The ASIC is comprised of 52 channels of which there are 4 cathode channels and 48 channels which can be configured as either anode channels with a baseline of 250 mV or pad sense channels to process induced signals with a baseline of 1.2 V. With a static * Corresponding author power dissipation of 3 mW, each channel performs low-noise charge amplification, high-order shaping, peak and timing detection along with analog storage and multiplexing. The overall channel linearity was better than ± 1 % with timing resolution down to 700 ps for charges greater than 8 fC in the 3 MeV range. With a 4 x 4 array of 6 x 6 x 20 mm 3 virtual Frisch-grid bar sensors connected and biased, an electronic resolution of ≈ 270 a rms for charges up to 100 fC in the 3.2 MeV range was measured. Spectral measurements obtained with the 3D correction technique demonstrated resolutions of 1.8 % FWHM at 238 keV and 0.9 % FWHM at 662 keV.

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Section: Introductionmentioning

confidence: 99%

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

Vernon

Geronimo

Bolotnikov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…The current leading semiconductors under intensive research for γ-rays detector are Cd 1– x Zn x Te (CZT) and TlBr. In nearly four decades of development, CZT has reached a μτ-product for electrons of ∼10 –2 cm 2 /V and an energy resolution of near 2% at 662 keV while TlBr has a μτ-product for electrons of ∼10 –3 cm 2 /V and energy resolution of ∼2.4%. − These high performance compounds, however, come with drawbacks. Low yield along with compositional nonuniformity and relatively low μτ-product for holes are the unsolicited features of CZT, and TlBr comes with polarization induced instability at room temperature operation …”

Section: Introductionmentioning

confidence: 99%

“…7−12 One particular family of interest are the mercury chalcohalides, Hg 3 Q 2 X 2 (Q = S, Se, Te; X = Cl, Br). These stable compounds have densities ranging from 6.83 to 7.78 g/cm 3 and band gaps of 2.0 < E g < 2.6. 13 Most of these compounds crystallize in a high symmetry cubic crystal system and are reported, in their respective phase diagrams, as congruently melting compounds, favorable for crystal growth.…”

Section: ■ Introductionmentioning

confidence: 99%

An Unusual Crystal Growth Method of the Chalcohalide Semiconductor, β-Hg₃S₂Cl₂: A New Candidate for Hard Radiation Detection

Wibowo

Malliakas

et al. 2016

Crystal Growth & Design

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We assess the mercury chalcohalide compound, β-Hg3S2Cl2, as a potential semiconductor material for X-ray and γ-ray detection. It has a high density (6.80 g/cm3) and wide band gap (2.56 eV) and crystallizes in the cubic Pm3̅n space group with a three-dimensional structure comprised of [Hg12S8] cubes with Cl atoms located within and between the cubes, featuring a trigonal pyramidal SHg3 as the main building block. First-principle electronic structure calculations at the density functional theory level predict that the compound has closely lying indirect and direct band gaps. We have successfully grown transparent, single crystals of β-Hg3S2Cl2 up to 7 mm diameter and 1 cm long using a new approach by the partial decomposition of the quaternary Hg3Bi2S2Cl8 compound followed by the formation of β-Hg3S2Cl2 and an impermeable top layer, all happening in situ during vertical Bridgman growth. The decomposition process was optimized by varying peak temperatures and temperature gradients using a 2 mm/h translation rate of the Bridgman technique. Formation of the quaternary Hg3Bi2S2Cl8 followed by its partial decomposition into β-Hg3S2Cl2 was confirmed by in situ temperature-dependent synchrotron powder diffraction studies. The single crystal samples obtained had resistivity of 1010 Ω·cm and mobility-lifetime products of electron and hole carriers of 1.4(4) × 10–4 cm2/V and 7.5(3) × 10–5 cm2/V, respectively. Further, an appreciable Ag X-ray photoconductivity response was observed showing the potential of β-Hg3S2Cl2 as a hard radiation detector material.

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“…To obtain high purity reagents, use is made of distillation, capil lary purification, and directional solidification [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Phase equilibria in the TlCl-TlBr system according to different sources[14][15][16]: (1)[14], (2)[15],(3)(4)(5)(6)(7)(8) [16], (3) solidus temperature (heating rate of 6°C/min), (4) liquidus temperature (heating rate of 6°C/min), (5) solidus temperature (heating rate of 2°C/min), (6) liquidus temperature (heating rate of 2°C/min), (7) liquidus temperature evaluated from cooling curves, (8) soli dus temperature evaluated from cooling curves. The thick solid lines represent optimized liquidus and solidus curves.…”

mentioning

confidence: 99%

Stability of the solid–liquid interface under constitutional undercooling in the crystal growth of TlCl–TlBr and TlBr–TlI solid solutions

Федоров

Чернова

2015

Inorg Mater

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Using phase diagram data for the TlCl-TlBr and TlBr-TlI systems, we have calculated the sta bility functions of the solid-liquid interface under constitutional undercooling for solid solutions of these systems. The curves thus obtained are typical of systems containing continuous series of solid solutions and having minima in their liquidus and solidus curves. The curves can be used to evaluate technologically impor tant process parameters necessary for the growth of crystals of high optical quality.

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Continued development of thallium bromide and related compounds for gamma-ray spectrometers

Cited by 28 publications

References 18 publications

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

An Unusual Crystal Growth Method of the Chalcohalide Semiconductor, β-Hg₃S₂Cl₂: A New Candidate for Hard Radiation Detection

Stability of the solid–liquid interface under constitutional undercooling in the crystal growth of TlCl–TlBr and TlBr–TlI solid solutions

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Continued development of thallium bromide and related compounds for gamma-ray spectrometers

Cited by 28 publications

References 18 publications

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

Front-end ASIC for spectroscopic readout of virtual Frisch-grid CZT bar sensors

An Unusual Crystal Growth Method of the Chalcohalide Semiconductor, β-Hg3S2Cl2: A New Candidate for Hard Radiation Detection

Stability of the solid–liquid interface under constitutional undercooling in the crystal growth of TlCl–TlBr and TlBr–TlI solid solutions

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Product

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An Unusual Crystal Growth Method of the Chalcohalide Semiconductor, β-Hg₃S₂Cl₂: A New Candidate for Hard Radiation Detection