Continued Scaling in Semiconductor Manufacturing Enabled by Advances in Lithography

Brink, Martin van den

doi:10.1109/iedm19573.2019.8993590

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…As the industry prepares to move toward the next generation of EUV lithography (EUVL) and beyond the 5-nm node, demand for thinner resist with high performance is continuously growing. [3][4][5][6] However, thinning of traditional, spin-coated polymer-based resists alone would not address challenges related to materials sensitivity and the pattern transfer process for the next generation EUVL. 7 A solution to such shortcomings is to incorporate high-EUV absorbing inorganic elements into the organic matrix, forming hybrid materials, which help enhance the sensitivity and mechanical strength of photoresists.…”

Section: Introductionmentioning

confidence: 99%

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Hwang

Woo

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

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Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

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