Continuity of thin layers of an organic semiconductor induced by the modification of the gate insulator

Abstract

In this work an unusual improvement in organic field effect transistor performance was explored after adding a very small amount (below 1 wt%) of hybrid nanoparticles containing TiO2 to poly(methyl...

Soft Rubbery Small Molecule for Gate-Dielectric Surface Engineering of Organic Thin-Film Transistors

“…Enhancement of interconnectivity of pentacene grains despite small grain sizes has also been reported from the previous report, improving electrical characteristics of the OTFTs . When the TSB3 content exceeded 25%, the μ FET s started to decline, indicating that the high surface roughness of the blended films hindered the charge-transport properties of the pentacene crystals, degrading μ FET s, V th s, and subthreshold swings. − …”

“…When the growth modes of pentacene crystals were discussed, the Frank–van der Merwe growth mode was not taken into account. This growth mode is typically observed in epitaxial or heteroepitaxial systems characterized by a significantly low lattice match between the deposited material and the substrate …”

“…It was also reported that high surface roughness could act as heterogeneous nuclei and increase the number of nucleation sites, making the grain sizes smaller. 25 According to previous reports, achieving a surface roughness below 1 nm can facilitate efficient semiconductor growth by enhancing surface diffusion and deposition. 26−28 In the case of blend films with weight ratios of 2:1, 1:1, and 1:2, the surface roughness exceeded 1 nm, and the higher the TSB3 content, the higher the roughness, up to 28.7 nm; therefore, grain sizes of the pentacene crystals decreased as the TSB3 content increased.…”

“…This growth mode is typically observed in epitaxial or heteroepitaxial systems characterized by a significantly low lattice match between the deposited material and the substrate. 25 Table 2 summarizes the surface energies of the TSB3/ PMMA blend films according to their weight ratios. Due to the lower surface energy of TSB3 (25.21 mJ m −2 ) compared to PMMA (36.83 mJ m −2 ), an increase in the TSB3 content in PMMA led to a reduction in the surface energy of the blend films.…”

In situ tuning of the performance of polymer field-effect transistors by soft plasma etching

“…11 Various approaches have been tried to reduce the SS and the V th of OFETs with improved stability, including using high-performance organic semiconductors 12,13 or doping. [14][15][16][17][18][19] However, it is worth noting that these conventional methods are often expensive and difficult to use for large-scale production. Therefore, it is inspiring to seek a low-cost and simple method to improve OFETs' performance.…”