Continuous Alloy-Composition Spatial Grading and Superbroad Wavelength-Tunable Nanowire Lasers on a Single Chip

Pan, Anlian; Zhou, Weichang; Leong, Eng Choon; Liu, Ruibin; Chin, A. H.; Ning, Cun‐Zheng

doi:10.1021/nl803456k

Cited by 205 publications

(211 citation statements)

References 22 publications

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“…7,16 Use of extrinsic optical feedback such as photonic crystals to achieve better mode selectivity is another approach. However, the high-cost and complicated fabrication required, together with the weak coupling and the high optical losses between the two different cavities would offset any advantages.…”

Section: Abstract: Cadium Sulfide Nanowire Cavity Urbach Tail Wavementioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] They are considered as one of the most important and promising routes to realizing miniaturized nanolasers and amplifiers. [11][12][13] Recent groundbreaking work on utilizing semiconductor NW cavities to compensate the damping loss and amplify the collective electron oscillations in plasmon nanocavities has kindled even greater interests in this field.…”

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confidence: 99%

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Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption

et al. 2013

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Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) laser is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, etc. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser. One stifling issue is the considerable optical losses induced in the NW cavities by these extrinsic methods that limit their applicability. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media to achieve lowloss, room-temperature NW lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing wavelength is continously tunable from 489 nm to 520 nm as the length of the NWs increases from 4 to 25 m. Our straightforward approach is widely applicable in most semiconductor or semiconductor/plasmonic NW cavities. Single crystalline semiconductor Fabry-Pé rot or whispering gallery nanowire (NW) cavity possessing naturally formed flat facets for good optical feedback is an ideal gain media for light amplification. [1][2][3][4][5][6][7][8][9][10] They are considered as one of the most important and promising routes to realizing miniaturized nanolasers and amplifiers. [11][12][13] Recent groundbreaking work on utilizing semiconductor NW cavities to compensate the damping loss and amplify the collective electron oscillations in plasmon nanocavities has kindled even greater interests in this field. 2,13,14 For practical applications, the ability to tailor the NW cavity mode is essential for developing multi-color miniaturized lasers, and critical for optimizing the resonant energy transfer between the cavity and the coupled system. 15 For a II-VI or III-V NW Fabry-Pé rot cavity, it is generally accepted that the output laser wavelength is determined by the bandgap of semiconductor NW. 11 To date, there is only limited success in tuning the optical cavity modes through (a) electric field modulation; and (b) elemental doping of the semiconductors. 6,9,16 In the former approach where the bandgap is modulated via the Franz-Keldysh or Stark effects, the NW cavities are highly susceptible to damage and only narrow tunability around 10 nm is demonstrated; 17 while in the later approach, the NW cavities are prone to structural defects induced by the dopants, thereby restricting the cavity gain. Keywords: Cadium sulfide, nanowire cavity, Urbach tail, Waveguide, lasingThough broadband tunable lasing wavelengths spanning 100 nm or more have been demonstrated in ternary semicondutor NW cavities, 18 cavity gain is however limited by the structural defects formed during the growth phase. 7,16 Use of extrinsic optical feedback such as photonic crystals to achieve better mode selectivity is another approach. However, the high-cost and complicated fabrication required, together with th...

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Section: Abstract: Cadium Sulfide Nanowire Cavity Urbach Tail Wavementioning

confidence: 99%

mentioning

confidence: 99%

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption

et al. 2013

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“…The first is based on spatially graded alloy composition achieved during nanowire growth. This was demonstrated on a single chip (1.2 cm long) using the ternary alloy CdSSe, with emission wavelengths ranging from 500 to 700 nm [77,117] [58]. The second tunability method is based on the self-absorption/reabsorption mechanism (see Section 3-b).…”

Section: (B) Tunabilitymentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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“…The successful demonstration of lasing in NWs has been reported for a variety of materials with a broad spectral coverage, first over nearultraviolet (UV) and visible spectral ranges and later extending to the near-infrared (NIR) spectral region [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The latter is currently attracting a growing attention as developments of efficient NIR lasers are essential e.g.…”

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confidence: 99%

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

et al. 2017

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Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III–V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic “S”-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, g th , of 3300 cm–1 and a spontaneous emission coupling factor, β, of 0.045. The dominant lasing peak is identified to arise from the HE21b cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional passivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.

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Continuous Alloy-Composition Spatial Grading and Superbroad Wavelength-Tunable Nanowire Lasers on a Single Chip

Cited by 205 publications

References 22 publications

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption

Nanowire Lasers

Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure

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