Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

Abstract

We present a study of the optical properties of quantum dots based on a new family of semiconductors: III–V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate the impact of N incorporation during the growth of InAs/GaAs quantum dots. Previous work [V. Sallet et al., to be submitted to J. Cryst. Growth (2005); O. Schumann et al., J. Appl. Phys. 96, 2832 (2004)] showed that increasing the flux of N atoms into the growth chamber modifies drastically the size of the dots which leads to a bimodal growth. Two populations of dots with different sizes appear. The quantum dot PL line broadens and a second PL line appears at higher energy. Time resolved PL allows us to identify the nature of this second PL line: second population of quantum dots. A second decay time is observed which we interpret as being the consequence of the perturbation of the electronic states of the quantum dots. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy

“…Thus, a reduction in growth temperature during QD growth could potentially increase the N content and, subsequently, extend the emission wavelength. Despite the importance of substrate temperature on nitrogen incorporation, most InAsN QDs have been grown at T s 470 • C, with few exceptions [9,15,[17][18][19][20][21][22][23][24].…”