Continuous-wave laser diodes based on epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures

Ладугин, М. А.; Gul'tikov, N. V.; Маrmalyuk, А. А.; Konyaev, V P; Соловьева, А. В.

doi:10.1070/qel17089

Quantum Electron.

2019

DOI: 10.1070/qel17089

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Continuous-wave laser diodes based on epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures

М. А. Ладугин¹,

N. V. Gul'tikov²,

А. А. Маrmalyuk³

et al.

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“…There are several applications of SQW SCH LD i.e. in medical, spectroscopy, space sciences, and depth sensing 1,2 ranging from 800 nm to 900 nm wavelength. 3 Many practical applications of semiconductor lasers e.g., LiDAR (Light Detection and Ranging) for autonomous transport vehicles have been on the rise in recent years.…”

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confidence: 99%

Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes

Saeed

Usman

Aamir

et al. 2023

ECS J. Solid State Sci. Technol.

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When n-cladding and p-cladding layer are graded, and the aluminum (Al) content is increased to 85% in a single quantum well separate confinement heterostructure laser diode, the result is improved optoelectronic performance. The output power is increased to 45 mW by using graded cladding layers. In addition, the lasing threshold current density is also lowered, which results in a significant optical gain. The stimulated emission rate also improves due to improved electron-hole recombination and thus resulting in improved lasing.

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mentioning

confidence: 99%

Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes

Saeed

Usman

Aamir

et al. 2023

ECS J. Solid State Sci. Technol.

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High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

Сліпченко¹,

Romanovich²,

Gavrina³

et al. 2022

Quantum Electron.

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The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7%. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.

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Semiconductor Lasers with Improved Lasing Characteristics

Danilov,

Ivanov,

Konyaev

et al. 2023

Bull. Lebedev Phys. Inst.

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Continuous-wave laser diodes based on epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures

Cited by 4 publications

References 0 publications

Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes

Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes

High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

Semiconductor Lasers with Improved Lasing Characteristics

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