Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

Abstract

The effects of thermal annealing on optically transparent electrodes of ITO (indium tin oxide) contact deposited on p-type Be-doped GaAs have been investigated by means of the transfer length method and secondary ion mass spectroscopy measurements. This study shows that the temperature that minimizes the specific contact resistance of ITO/GaAs (500 • C) greatly differs from the temperature that leads to a maximum conductivity of the ITO layer (600 • C) and from the values reported on ITO/GaAs in the literature. The oxygen diffusion in the semiconductor layer and its interaction with the beryllium dopant is pointed out to explain these differences.

Erbium (Er) glass lasers

“…For this reason reaching the threshold of cW lasing in arc lamp pumped er glass lasers is very difficult. We know only one successful example 11 where cW laser action was obtained using a Xe-filled arc lamp and a thin (2.7 mm) Yb-Er glass rod with minimized (10 19 cm -3 ) er content. The design of Er glass flashlamp lasers has some peculiarities.…”