We report a continuous-wave (cw) source of tunable mid-infrared radiation providing tens of milliwatt of output power in the 6460-7517 nm spectral range. The source is based on difference-frequency generation (DFG) in orientation-patterned (OP)-GaAs pumped by a Tm-fiber laser at 2010 nm and a 1064 nm-Yb-fiber-pumped cw optical parametric oscillator. Using a 25.7-mm-long OP-GaAs crystal, we have generated up to 51.1 mW of output power at 6790 nm, with >40 mW and >20 mW across 32% and 80% of the mid-infrared tuning range, respectively, which is to the best of our knowledge the highest tunable cw power generated in OP-GaAs in this spectral range. The DFG output at maximum power exhibits passive power stability better than 2.3% rms over more than 1 h and a frequency stability of 1.8 GHz over more than 1 min, in high spatial beam quality. The system and crystal performance at high pump powers have been studied. , with wavelengths up to 5 μm also obtained at the mW power level [7]. However, the intrinsic onset of absorption in MgO:PPLN and other oxide-based ferroelectric materials beyond ∼4 μm presents a fundamental barrier to wavelength generation at practical powers further into the mid-IR. As such, the search for alternative nonlinear materials with high transmission above ∼4 μm and effective techniques for spectral expansion into the longer mid-IR wavelengths must be explored. In this context, orientation-patterned (OP)-GaAs is a highly attractive nonlinear crystal. Its high nonlinear coefficient d eff d 14 ∼ 94 pm∕V [8], wide transparency across 0.9-17 μm, high thermal conductivity (46 W/mK), and high damage threshold [9] make it a primary candidate for deep mid-IR generation. Its nonlinear figure of merit, F d 2 eff ∕n 3 (n is the refractive index), is nearly ten times that of MgO:PPLN. In an early report, a pulsed OPO based on OP-GaAs, tunable in the 5.7-9.1 μm range was demonstrated, using a PPLN OPO pumped by a Q-switched Nd:YAG laser at 1064 nm [10]. Recently, a pulsed OP-GaAs OPO tunable over 8.8-11.5 μm was reported using direct pumping with a Q-switched Tm, Ho:YLF laser [11]. However, the development of cw OPOs at wavelengths >4 μm still remains a major challenge, in a large part due to the high threshold sensitivity to cavity loss in practical singly resonant configuration, combined with the difficulty in achieving relatively complex mirror and crystal coatings of high quality and low loss in the deep mid-IR spectral range to achieve oscillation threshold. In the meantime, one can circumvent this obstacle by deploying the alternative technique of DFG, which is single-pass and does not require the attainment of an oscillation threshold. The technique can provide an effective and robust approach for the generation of nonnegligible output powers at longer wavelengths [2]. In the past few years, DFG based on OP-GaAs, with cw output powers up to several μW has been demonstrated [12]. A few years ago, a cw source tunable across 7.6-8.2 μm with sub-mW output power was reported by using DFG between an Er-doped f...