Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

Abstract

We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF(4) and Pr:BaY(2)F(8) was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB(3)O(5) as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF(4) and Pr:BaY(2)F(8), respectively.

Possibility of high power UV light generation in periodically poled MgO doped lithium niobate waveguides

“…Figure 2a shows the onset of inhibition in WG I is at pump power of ∼0.4 W. Figure 2b shows the onset of inhibition in WG II is around a pump power of 0.3 W. Figure 2c shows the onset of inhibition in WG III is much lower, at a pump power of ∼0.24 W. It can be seen that for WG I, WG II and WG III, below the threshold pump power of inhibition, the maximum SHG power are 0.286, 0.226 and 0.195 W, which corresponds to conversion efficiencies of 71.5, 75.3 and 81.2 %, respectively. It is clear that the conversion efficiencies of the present proposal based on PPMgLN waveguides are predicted to be significantly higher than the reported results based on LBO crystals (Richter et al 2006). As the inhibition in WG I is relatively weaker than that in WG II and WG III, the maximum SHG power generated in WG I can reach 0.571 W which is apparently higher than that in WG II and WG III.…”

Upconversion excitations in Pr3+-doped BaY2F8 crystal

“…Recent reports [35][36][37] demonstrated efficient, room temperature visible lasing in several Pr-activated fluoride crystals under direct GaN diode laser pumping. It seems that further development of GaN-based semiconductor lasers emitting at wavelengths between 350 and 450 nm will allow to more efficiently exploit the potential of Pr 3+ -doped solidstate lasers.…”

Out of the blue: semiconductor laser pumped visible rare‐earth doped lasers

“…As an example, initial experiments were performed on intracavity frequency doubling of 546 nm to 273 nm [115] and 698 nm to 349 nm [116]. Besides Pr 3+ :LiLuF 4 [117], frequency doubling of Pr 3+ -lasers in other host materials such as Pr 3+ :KY 3 F 10 [118], Pr 3+ :BaY 2 F 8 [87], and Pr 3+ :YAlO 3 [119] did not result in efficient generation of coherent UV radiation, yet. However, this should not be a general issue of these host materials.…”