Continuous wavelength modulation of semi‐polar plane InGaN/GaN MQWs based on vapor‐phase‐diffusion‐based selective‐area pyramidal growth

Abstract

We have achieved continuous wavelength modulation from InGaN quantum wells on semi‐polar {11–22} planes with selective‐area growth of hexagonal pyramids with varied widths of masks surrounding them. The thickness of InGaN wells on the surface of the pyramids was tailored by the mask width, which led to wavelength modulation. The use of semi‐polar planes reduced quantum confined stark effect, allowing a wider range of wavelength modulation: from 446 to 500 nm as measured by cathode luminescence.