Continuously tuned external cavity semiconductor laser

Trutna, W. R.; Stokes, L.F.

doi:10.1109/50.254086

Cited by 50 publications

(32 citation statements)

References 6 publications

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“…To achieve continuous mode-hop-free wavelength tuning, the grating must be rotated and translated so that the cavity mode stays aligned with the grating filter. It is well known that if the grating (or mirror in the case of the Littman configuration) is rotated around a pivot point located at the intersection of the line through the rotating surface, and the normal to the optical axis at a point that is a distance n · λ vac from the rotating element along the optical axis, where n is the number of wavelengths in the cavity, and λ vac is the vacuum wavelength, then the cavity mode and the grating filter stay aligned during rotation [141], [142].…”

Section: Tunable Lasersmentioning

confidence: 99%

Optical MEMS for Lightwave Communication

Solgaard

Ford

2006

J. Lightwave Technol.

307

141

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Abstract-The intensive investment in optical microelectromechanical systems (MEMS) in the last decade has led to many successful components that satisfy the requirements of lightwave communication networks. In this paper, we review the current state of the art of MEMS devices and subsystems for lightwave communication applications. Depending on the design, these components can either be broadband (wavelength independent) or wavelength selective. Broadband devices include optical switches, crossconnects, optical attenuators, and data modulators, while wavelength-selective components encompass wavelength add/drop multiplexers, wavelength-selective switches and crossconnects, spectral equalizers, dispersion compensators, spectrometers, and tunable lasers. Integration of MEMS and planar lightwave circuits, microresonators, and photonic crystals could lead to further reduction in size and cost.

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Section: Tunable Lasersmentioning

confidence: 99%

Optical MEMS for Lightwave Communication

Solgaard

Ford

2006

J. Lightwave Technol.

307

141

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“…High precision mechanical movement stages were used to secure adequate flexibility and precise translation and rotation of the optical parts in the system. It is to be noted that the grating pivot point was located straight on the optical axis of the system and also no other precautions were taken to eliminate eventual mode hoping when tuning the laser frequency (Ricci et al 1995;Lonsdale et al 2002) or to achieve tunability in a wide frequency range (Favre and Le Guen 1991;Trutna and Stokes 1993). Instabilities leading to mode hoping could be avoided by locating the pivot aside the optical axis in a carefully selected point (McNicholl and Metcalf 1985;Nilse et al 1999).…”

Section: Methodsmentioning

confidence: 98%

External cavity diode lasers with E-beam written silicon diffraction gratings

et al. 2007

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Performance of external cavity diode lasers with silicon gratings produced by E-beam writing and subsequent reactive ion etching is described. Optical amplifiers used in the experiments were based on single quantum well heterostructures grown by molecular beam epitaxy. The lasers were set up in the Littrow configuration and have been designed to allow for wavelength tuning in the range centred at 960 nm.

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“…Fortunately, a continuous tuning range, greater than half of the FSR, can be accomplished by rotating the grating about a carefully chosen pivot. This problem has been considered by a number of authors [62][63][64][65] and it was shown that the optimum pivot is located at the intersection between the grating plane and the line parallel to the rear facet of the diode.…”

Section: Littrow and Littman Configurationsmentioning

confidence: 99%

“…In Ref. 65, a Doppler-shift model was used to obtain a value for the tuning range and position of the ideal grating pivot was calculated for laser cavities containing any number of dispersive elements, which introduce not only group delay dispersion, but also frequency-dependent offset and tilt of the resonator optical axis. In addition, the continuous tuning range as a function of the pivot location error has been analyzed in order to find out tolerances for laser mechanical design.…”

Section: Littrow and Littman Configurationsmentioning

confidence: 99%

External cavity wavelength tunable semiconductor lasers - a review

Mroziewicz

2008

Opto-Electronics Review

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External cavity tunable lasers have been around for many years and now constitute a large group of semiconductor lasers featuring very unique properties. The present review has been restricted to the systems based on the edge emitting diode lasers set-up in a hybrid configuration. The aim was to make the paper as concise as possible without sacrificing, however, most important details. We start with short description of the fundamentals essential for operation of the external cavity lasers to set the stage for explanation of their properties and some typical designs. Then, semiconductor optical amplifiers used in the external cavity lasers are highlighted more in detail as well as diffraction gratings and other types of wavelength-selective reflectors used to provide optical feedback in these lasers. This is followed by a survey of designs and properties of various external cavity lasers both with mobile bulk gratings and with fixed wavelength selective mirrors. The paper closes with description of some recent developments in the field to show prospects for further progress directed towards miniaturization and integration of the external cavity laser components used so far to set-up hybrid systems.

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Continuously tuned external cavity semiconductor laser

Cited by 50 publications

References 6 publications

Optical MEMS for Lightwave Communication

Optical MEMS for Lightwave Communication

External cavity diode lasers with E-beam written silicon diffraction gratings

External cavity wavelength tunable semiconductor lasers - a review

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