Continuum modeling of implantation and thermal processes for advanced devices formation

Abstract

Technology Computer-Aided Design is widely used for the development and optimization of advanced device formation. Ion implantation and thermal annealing are the main focus of dopant profile simulation for process technologies. In this paper, we review the current continuum modeling capabilities and calibration for ion implantation and thermal processes, including Monte Carlo ion implantation, coimplantation, amorphization, recrystallization, damage evolution, and dopant diffusion and activation. In addition, modeling of alternative doping techniques such as thermal implantation, plasma doping, and melt laser annealing will be addressed. Continuum front-end process simulation of Si-based devices including advanced CMOS, memory, power, and optoelectronic devices is considered to be mature. With the introduction of new channel materials, the models and calibration of alternative materials such as SiGe, Ge, and III-V are also required and their current status is discussed.

Improved physical models for advanced silicon device processing

“…The competition and balance among all these concurrent processes can be optimized by varying the large amount of plasma doping parameters such as energy, dose, power, bias pulsing, pressure and gas dilution ratios, in order to obtain the desired dopant profile characteristics [180]. Several factors determine the doping profiles resulting from plasma doping, including plasma chemistry, deposition and etching characteristics, and energy distribution in the collisional plasma (b) (a) (c) [186]. Thus, a challenging objective could be the mapping of all the concurring phenomena in a reliable computational tool for the plasma doping simulation.…”