Contour metrology accuracy assessment using TMU analysis

Schuch, Nivea G.; Abaidi, Mohamed; Figueiro, Thiago; Schiavone, Patrick; Sendelbach, Matthew

doi:10.1117/12.2584617

Cited by 2 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, a drawback of using low landing energy for image acquisition is the lower Signal-to-Noise Ratio (SNR) as compared to standard imaging conditions. This may represent an extra challenge to the contour extraction algorithm, which needs to be robust, a challenge that can be addressed however, by using a model-based approach [19,20].…”

Section: Resultsmentioning

confidence: 99%

Trends in e-beam metrology and inspection

Lorusso

2024

Metrology, Inspection, and Process Control XXXVIII

View full text Add to dashboard Cite

For many years, e-beam SEM metrology has been quite conservative. However, a few years ago, we began to observe a sort of restlessness in the field, a trend that was consistently confirmed year after year since then. Such a change was mainly driven by the daunting specification requirements for the advanced metrology nodes and High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL), as well as by the device evolution in terms of architecture. We observed a systematic attempt to expand the application space in which the e-beam SEM had operated, tackling issues ranging from metrology of 3D structures to edge placement error, voltage contrast, e-beam inspection, and more.Such an expansion of the application space has forced heavily automated SEM to evolve into something different: a more flexible and powerful e-beam tool focusing not only on CD metrology, but on a range of novel use cases. To implement these new applications, it soon became evident that it was necessary to expand the range and type of tool specifications and features. We observed changes in landing energy, beam current, resolution, as well as algorithms. The detection process changed too, and higher current and better detection efficiency opened the door to a variety of back-scattered electron applications. Artificial intelligence is now critical not only in terms of speed of analysis, but most importantly for the quality of its results. Multibeam tools are fast approaching and have the potential to become a central technology element in the high-NA EUVL environment, where resolution and throughput for inspection must go hand-in-hand. In this paper, we provide an overview of the recent trends in e-beam metrology and inspection. e-beam, CD SEM, e-beam Inspection, Multibeam, e-beam Review Invited Paper

show abstract

Section: Resultsmentioning

confidence: 99%

Trends in e-beam metrology and inspection

Lorusso

2024

Metrology, Inspection, and Process Control XXXVIII

View full text Add to dashboard Cite

show abstract

“…One is the see through imaging which has been extended to ADI step thanks to the improved landing anergy and current of advanced SEM column technology [6] . The other is robust edge contour extraction of low SNR image together with design-based metrology which can deliver all relevant metrics based on the device CAD layout [7] . AIO metrology with these two additional extensions, EPE improvement can be applied as real time CD and overlay correction at ADI step and massive gauge of Distance from Design (DFD) can be utilized for better understanding of localized patterning variability.…”

Section: Resultsmentioning

confidence: 99%

“…Overlay metrology on real pattern at ADI was demonstrated and shown the overlay NZO (Non-Zero Offset) error decomposition between lithography and other processes [6] . For the ADI EPE analysis, the contour extraction from low contrast image is another key enabler together with design-based metrology [7] . Utilizing ADI and ACI AIO image of high landing energy SEM and the contour metrology, EPE metrics can be measured along the process steps and analyzed through contours to design intent.…”

mentioning

confidence: 99%

Interlayer 3D-EPE analysis using contour distance from design with high landing energy SEM imaging on advanced logic devices

Chung,

Maeng,

Kim

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

View full text Add to dashboard Cite

Edge Placement Error (EPE) is a construction metric which can be derived from CD (critical dimension), Overlay and LER (Line Edge Roughness) measurements from multiple layers [1] , and is well accepted as a critical metric of patterning control due to the increases of process complexity as the design rule shrinkage of CMOS devices. Historically, these conventional metrics are measured from multiple tools on different patterns and locations; for example -overlay, on an optical tool from scribe-line target at ADI (After Develop Inspection) step, while CD/LER data are measured using a CD-SEM tool on a real device pattern at ADI/ACI (After Clean Inspection) steps. TMU (Total Measurement Uncertainty) increasement, which causes the consistency of EPE analysis, is the major limiting factor with the constructive EPE approach. Hence implementing EPE with the constructive way as in-line monitoring metric is not practical and straightforward way. This limitation on traditional EPE methodology can be overcome through single image-based approach [2,3] , where EPE is measured directly from the high landing energy see-through image [4] . Another advantage is that in parallel it provides CD, Overlay and local variability measured at once on a real device feature. All-In-One (AIO) means all EPE related metrics (CD, Overlay, LER, EPE metric) are captured with single image, which is inherently delivering TMU of sub nm level. Continuous device scaling requires tighter TMU in patterning process integration and control.

show abstract

Contour metrology accuracy assessment using TMU analysis

Cited by 2 publications

References 0 publications

Trends in e-beam metrology and inspection

Trends in e-beam metrology and inspection

Interlayer 3D-EPE analysis using contour distance from design with high landing energy SEM imaging on advanced logic devices

Contact Info

Product

Resources

About