Contraction of aluminum oxide thin layers in optical heterostructures

Durand, Olivier; Wyckzisk, F.; Olivier, J.; Magis, M.; Galtier, Pierre; Rossi, Alfredo De; Calligaro, M.; Ortiz, V.; Berger, V.; Leo, Giuseppe; Assanto, Gaetano

doi:10.1063/1.1612893

Cited by 17 publications

(12 citation statements)

References 16 publications

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“…Since then, several three-wave mixing interactions were demonstrated in AlGaAs/GaAs/AlOx waveguides [6][7][8][9], including SPDC.Despite those encouraging results, the goal of a semiconductor integrated OPO has not yet been reached because of the 0.5 cm -1 optical losses that occur after AlAs selective oxidation [8], a factor-of-five higher than the guided-wave losses before oxidation. Although light scattering in such waveguides has long been observed and tentatively ascribed to GaAs/AlOx interfaces roughness [10], the only transmission electron microscopy (TEM) related study so far was only of a qualitative type [11]. Because of the TEM potential in quantitative analysis at the atomic scale, this article reports on a TEM study aimed at quantifying the GaAs/AlOx interfaces roughness and evaluating the related optical losses.…”

Section: Introductionmentioning

confidence: 99%

TEM characterization of oxidized AlGaAs/AlAs nonlinear optical waveguides

Guillotel¹,

Langlois²,

Leo³

et al. 2010

J. Phys. D: Appl. Phys.

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The internal interfaces of multilayer Al x Ga 1-x As/AlAs nonlinear optical waveguides are investigated by high-angle annular-dark-field and energy-filtered scanning transmission electron microscopy, before and after partial wet oxidation of AlAs layers. Via a simple phenomenological model, the corresponding roughness parameters allow predicting the scattering-induced waveguide optical losses, which are in reasonable agreement with the experimental value of 0.5 cm -1 . We also find that Al x Ga 1-x As layers adjacent to oxidized AlAs tend to be oxidized through the interfaces, even for low Al fraction, with typical oxidation depths of 9 nm for x=0.7 and 2 nm for x=0.

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Section: Introductionmentioning

confidence: 99%

TEM characterization of oxidized AlGaAs/AlAs nonlinear optical waveguides

Guillotel¹,

Langlois²,

Leo³

et al. 2010

J. Phys. D: Appl. Phys.

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“…4(a), the vertical oxidation rate, r GaAs, , was measured as ~4 nm/min for ~2  10 18 cm -3 (the upper interface) and ~1 nm/min for ~1  10 17 cm -3 (the lower interface) respectively at the present oxidation conditions, very different from r AlGaAs which is on a m/min scale. Generally, r GaAs, is negligible for undoped GaAs [7], [16]. These results suggest that r GaAs, is enhanced with Si doping concentration.…”

Section: A Lhomentioning

confidence: 51%

Radiation Effects in III-V Nanowire Devices

Brueck¹

2016

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)2. REPORT TYPE 3. DATES COVERED (From -To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER Distribution Statement A. Approved for public release; distribution is unlimited. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S)12The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) by focused-ion beam (FIB) etching and chemical oxidation is reported. The device has a semiconductor-on-insulator structure with an n+-GaAs/Al2O3 layer stack implemented by lateral hydrolyzation oxidation. A 2 micron-long channel having an effective cross section ~70 x 220 nm is directly fabricated into the n+-GaAs layer by FIB etching. The channel is electronically isolated from the substrate by the Al2O3 layer and is effectively an in-plane NW epitaxially connected to the source and drain for a planar MOSFET within a single layer. The NW channel is surrounded by an ~15 nm-thick gate oxide. IntroductionNanowires are a potential structure for replacing planar CMOS in next generation electronics. Most investigations have relied on vertical growth (often with wire-to-wire variations in linewidths and random positioning) based on vapor-liquid-solid (VLS) catalyzed growth. Moving this technology from single transistor measurements to the construction of circuits with billions of transistors to complement existing integrated circuit technologies would require pick and place technologies to which are inherently slow and non-scalable. An attractive alternative that has received much less attention is the top-down fabrication of in-plane nanowires where the relative locations and interconnections are defined by lithographic processes. We are exploring the capabilities of III-V semiconductors in a SOI geometry which are well-developed technologies capability of scaling to dense circuit structures ...

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“…We ascribe these residual losses to guided-mode scattering at the interfaces between oxidized and crystalline layers [30]. Conversely, virtually no losses are caused by the ridge side-wall roughness, which we estimate to less than 2 nm rms, with atomic-force microscopy.…”

Section: Experimental Results and Perspectivesmentioning

confidence: 98%

“…These originate from optical defects at the AlOx layers interfaces, as shown from spectroscopic and TEM analyses [29,30].…”

Section: Experimental Results and Perspectivesmentioning

confidence: 99%