Contrast inversion of O adatom on rutile TiO2(1 1 0)-(1 × 1) surface by atomic force microscopy imaging

Wen, Huan Fei; Zhang, Quanzhen; Adachi, Yuuki; Miyazaki, Masato; Sugawara, Yasuhiro; Li, Yan Jun

doi:10.1016/j.apsusc.2019.144623

Cited by 9 publications

(5 citation statements)

References 48 publications

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“…The contrast between the two atoms of the Au dimer appears slightly darker compared to the Si adatoms on the Si(111)-7 × 7 surface, indicating that the Au atoms are slightly positively charged. This is consistent with the findings of contrast variation in CPD images, as explained by several studies [31][32][33][34][35][36]41].…”

Section: Resultssupporting

confidence: 93%

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Guo,

Ren,

Shu

et al. 2024

Phys. Scr.

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Atomic-scale surface adsorption has been a significant research topic in recent years, with a particular emphasis on the adsorption properties of Au/Si(111)-7×7, which are vitally important for pioneering future novel semiconductor devices. Here, we studied the adsorption of Au dimer on the Si(111)-7×7 surface with atomic resolution using non-contact atomic force microscopy and Kelvin probe force microscopy at room temperature. Our results show that the Au dimer adsorbs in the vicinity of the Si rest atoms, displaying auniquelocalized electron distribution.In density functional theory calculations, three candidate Au dimer adsorption sites have been identified, and the most stable Au dimer adsorption site corresponds with experiments. Furthermore, the local electron transfer of Au dimer adsorption has been analyzed, affirming the electron distribution around the Au dimer adsorption site. This research reveals that the structure and charge transfer of adsorbed Au dimers on Si(111)-7×7 provide insight into the mechanism of the metal-semiconductor system.

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Section: Resultssupporting

confidence: 93%

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Guo,

Ren,

Shu

et al. 2024

Phys. Scr.

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“…When the tip apex was positively charged, the O 2c row was bright on the image due to the larger attractive force between the tip and the negative O 2c row. Surface defects were imaged as dark holes, which is called the hole mode [ 28 , 29 ]. When the tip apex was negatively charged, the contrast was inverted compared with that in the hole mode, and H atoms appeared as brighter spots than the O V defects, which is called the protrusion mode.…”

Section: Resultsmentioning

confidence: 99%

“…Features of the surface structure were related to the charge states of the tip apex, and a stable tip was essential to accurately characterize the surface structure and properties in the experiment [ 25 , 26 ]. The imaging mode became stable in AFM experiments when the metal-coated Si cantilever was employed in the experiments [ 27 , 28 , 29 ].…”

Section: Methodsmentioning

confidence: 99%

Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy

Wen

Sugawara

2020

Nanomaterials

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We studied the O2 dissociated state under the different O2 exposed temperatures with atomic resolution by scanning probe microscopy (SPM) and imaged the O adatom by simultaneous atomic force microscopy (AFM)/scanning tunneling microscopy (STM). The effect of AFM operation mode on O adatom contrast was investigated, and the interaction of O adatom and the subsurface defect was observed by AFM/STM. Multi-channel exploration was performed to investigate the charge transfer between the adsorbed O and the TiO2(110) by obtaining the frequency shift, tunneling current and local contact potential difference at an atomic scale. The tunneling current image showed the difference of the tunneling possibility on the single O adatom and paired O adatoms, and the local contact potential difference distribution of the O-TiO2(110) surface institutively revealed the charge transfer from TiO2(110) surface to O adatom. The experimental results are expected to be helpful in investigating surface/interface properties by SPM.

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“…bidimensional (2D) materials such as molybdenum disulphide (MoS 2 ) have been studied by STM and AFM at the nanoscale [16][17][18][19]. Moreover, noncontact AFM (NC-AFM) is expected to provide structural information on semiconductors with high spatial resolution [20][21][22][23][24]. Kelvin probe force microscopy (KPFM) reflects the local work function difference among surface structures; the charge distribution on the semiconductor surface can be revealed [25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

Sugawara

2023

J. Phys.: Condens. Matter

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Studies of the physics underlying carrier transport characteristics and band bending of semiconductors are critical for developing new types of devices. In this work, we investigated the physical properties of Co ring-like cluster (RC) reconstruction with a low Co coverage on a Si(111)-7×7 surface at atomic resolution by atomic force microscopy/Kelvin probe force microscopy at 78 K. We compared the applied bias dependence of frequency shift between two types of structure: Si(111)-7×7 and Co-RC reconstructions. As a result, the accumulation, depletion, and reversion layers were identified in the Co-RC reconstruction by bias spectroscopy. For the first time, we found that Co-RC reconstruction on the Si(111)-7×7 surface shows semiconductor properties by Kelvin probe force spectroscopy. The findings of this study are useful for developing new materials for semiconductor devices.

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Contrast inversion of O adatom on rutile TiO2(1 1 0)-(1 × 1) surface by atomic force microscopy imaging

Cited by 9 publications

References 48 publications

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

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Contrast inversion of O adatom on rutile TiO2(1 1 0)-(1 × 1) surface by atomic force microscopy imaging

Cited by 9 publications

References 48 publications

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Clarification of Au dimer adsorption sites on Si (111)-7 × 7 surface by AFM/KPFM

Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

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Product

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Contrast inversion of O adatom on rutile TiO2(1 1 0)-(1 × 1) surface by atomic force microscopy imaging