Contribution in PCE enhancement: numerical designing and optimization of SnS thin film solar cell

Ultrafast Hole Migration at the p–n Heterojunction of One-Dimensional SnS Nanorods and Zero-Dimensional CdS Quantum Dots

“…Based on the equation E CB = E VB + E g , the conduction band positions for SnS NRs and CdS QDs were calculated to be −1.63 and −1.62 eV, respectively. The conduction band offset (CBO) and valence band offset (VBO) of 0.01 and 1.45 eV were determined for SnS@CdS, respectively, and are comparable with previously reported values . Thus, according to valence and conduction band positions of SnS NR and CdS QDs, the decrease in CdS PL intensity in the presence of SnS was attributed to injection of photoexcited holes from CdS QDs to SnS NRs as we already mentioned that the valence band (VB) of CdS lies below the VB of SnS.…”

“…The conduction band offset (CBO) and valence band offset (VBO) of 0.01 and 1.45 eV were determined for SnS@CdS, respectively, and are comparable with previously reported values. 32 Thus, according to valence and conduction band positions of SnS NR and CdS QDs, the decrease in CdS PL intensity in the presence of SnS was attributed to injection of photoexcited holes from CdS QDs to SnS NRs as we already mentioned that the valence band (VB) of CdS lies below the VB of SnS. However, we cannot rule out the possibility of energy transfer between SnS NRs and CdS QDs in SnS@CdS HS as the PL band of CdS QDs overlaps with the absorption of SnS NRs as shown in Figure S10.…”

“…The band gap of SnS NRs is calculated to be 1.3 eV as shown in Figure 3B. 32 Due to its narrow band gap, a large part of the solar spectrum from ultraviolet (UV) to near-infrared (NIR) wavelength regions can be utilized. We did not observe any clear excitonic peak in optical absorption spectra of SnS NRs due to the presence of a high density of defect states.…”

“…The relation between absorption coefficient and photon energy is as follows (eq ): α italich ν = β false( italich ν − italicE normalg false) 1 / 2 where h ν is photon energy, β is constant relative to the material, and α is the optical absorption coefficient. The band gap of SnS NRs is calculated to be 1.3 eV as shown in Figure B . Due to its narrow band gap, a large part of the solar spectrum from ultraviolet (UV) to near-infrared (NIR) wavelength regions can be utilized.…”

Interfacial Engineering of SnS/Ga2O3 Heterojunction by SnO for a High‐Performance Self‐Powered Solar‐Blind UV Photodetector

“…[28][29][30] Few reports focus on the SnS heterojunction interface to optimize the performance of the device. [31] Tin monoxide (SnO), a rare p-type oxide semiconductor belonging to the Sn (II) monochalcogenides, becomes a novel choice to modify the heterojunction interface due to its high carrier mobility. [32] Yarangsi et al added an addictive SnO x layer for charge transfer and interface improvement in perovskite solar cells.…”