Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC

“…A 1SSF originating from a half loop array (HLA) [39][40][41][42][43][44][45][46] formed a double rhombic stacking fault (DRSF). 26,27,45) After colliding with the neighboring DRSF, the part of the expanding front that could be a 90°Si-core PD disappeared at 120 s. 27) We therefore measured the distance of the expanding front before and after the rapid movement of the 90°Si(g) PD, which is the diagonal distance of the diamond as shown in Fig. 2(b).…”

“…11,19) In other words, differences in the combinations of PDs change the 1SSF shape as they expand, resulting in triangles, 8,20) trapezoids,8, 21,22) parallelograms, 21,22) bars with and without a triangle, 11,21,23) and double rhombuses. [24][25][26][27] The Burgers vectors and line directions of the PDs in various 1SSF shapes have been characterized using photoluminescence (PL) and transmission electron microscopy (TEM) analyses, and the results can explain the expanded 1SSF shapes by the combinations of the Burgers vector and line direction of the BPD at the origin. [21][22][23][26][27][28][29][30][31][32][33] 1SSF shapes are understood by the different expansion rates of leading PDs of 30°or 90°Si(g); namely, 90°S i(g) PDs expand faster than 30°Si(g) PDs.…”

“…[24][25][26][27] The Burgers vectors and line directions of the PDs in various 1SSF shapes have been characterized using photoluminescence (PL) and transmission electron microscopy (TEM) analyses, and the results can explain the expanded 1SSF shapes by the combinations of the Burgers vector and line direction of the BPD at the origin. [21][22][23][26][27][28][29][30][31][32][33] 1SSF shapes are understood by the different expansion rates of leading PDs of 30°or 90°Si(g); namely, 90°S i(g) PDs expand faster than 30°Si(g) PDs. 34,35) Only a few experiments on the expansion rates of 1SSFs have been reported, and these were conducted by electroluminescence (EL) or UV illumination.…”

“…Very recently, experimentally captured 90°Si(g) PD movement was reported when two neighboring double rhombic 1SSFs coalesced. 27) However, the mechanisms that determine the expansion rate are not yet fully understood.…”