Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Abstract

Abstract. The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence vs. for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f-transitions to this scattering.Keywords: silicon, electron mobility, uniaxial strain, g-transitions, f-transitions, tensoresistive effect.Manuscript received 29.12.11; revised version received 18.01.12; accepted for publication 26.01.12; published online 29.03.12.